Zobrazeno 1 - 10
of 127
pro vyhledávání: '"H. Tews"'
Publikováno v:
Viszeralmedizin 2021 Gemeinsame Jahrestagung Deutsche Gesellschaft für Gastroenterologie, Verdauungs- und Stoffwechselkrankheiten (DGVS), Sektion Endoskopie der DGVS, Deutsche Gesellschaft für Allgemein und Viszeralchirurgie (DGAV).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0ccfabbb6cf5179c10dd774d0ae10e
https://doi.org/10.1055/s-0041-1734054
https://doi.org/10.1055/s-0041-1734054
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Journal of Chemical Sciences. 105:591-601
With optimized triplet sensitizers and longwave UV light (300-350 nm), distannanes R3Sn-SnR3, R being Bu by preference, are used as advantageous sources of stannyl radicals R3Sn that are versatile reagents for initiating organic free radical synthese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f15bf9b23ca3fe1c8c3aa45ce972da
https://doi.org/10.1007/bf03040831
https://doi.org/10.1007/bf03040831
Publikováno v:
ChemInform. 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340c70ff5a90fafb2e9cfd2e2da1c70c
https://doi.org/10.1002/chin.199403089
https://doi.org/10.1002/chin.199403089
Publikováno v:
ChemInform. 25
With optimized triplet sensitizers and longwave UV light (300-350 nm), distannanes R3Sn-SnR3, R being Bu by preference, are used as advantageous sources of stannyl radicals R3Sn that are versatile reagents for initiating organic free radical synthese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e4acbb208d462af7ad8c23716ddbfa6
https://doi.org/10.1002/chin.199436290
https://doi.org/10.1002/chin.199436290
Publikováno v:
Journal of Crystal Growth. 124:339-345
Photoluminescence mapping of 2 inch and 3 inch wafers with AlGaAs/GaAs heterojunction bipolar transistor (HBT) layer sequences is reported. Photoluminescence spectra taken at 77 K on these layers reveal four well distinct emission lines from cap, emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd822ef0b4b53d719f2b59810aeef22a
https://doi.org/10.1016/0022-0248(92)90481-w
https://doi.org/10.1016/0022-0248(92)90481-w
Publikováno v:
Journal of Crystal Growth. 107:947-951
Photoluminescence spectroscopy at 2 K was performed on GaAs/GaAlAs double barrier resonant tunneling diodes grown by metalorganic vapour phase epitaxy. Characteristic emission spectra were found composed of weak GaAs near-bandgap luminescence plus an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6241f015dc47a3b0c269f6c1e6a7997d
https://doi.org/10.1016/0022-0248(91)90585-s
https://doi.org/10.1016/0022-0248(91)90585-s
Autor:
H. Tews, R.D. Schnell
Publikováno v:
Solid-State Electronics. 33:1467-1470
Microstructured resonant tunneling diodes are fabricated based on AlGaAs/GaAs double barrier quantum wells grown by metal organic vapour phase epitaxy on semiinsulating GaAs substrates. The active diode areas were varied between 16 and 100 μm 2 . Di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345be93dd99c35d17e0c5d5d3349cfd9
https://doi.org/10.1016/0038-1101(90)90122-u
https://doi.org/10.1016/0038-1101(90)90122-u
Publikováno v:
Journal of Applied Physics. 68:1318-1323
Abrupt Mg doping profiles have been realized in npn GaAs/GaAlAs heterojunction bipolar transistor (HBT) structures with compositional grading in the base region. The layers were grown by metalorganic vapor‐phase epitaxy (MOVPE). Acceptor concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfab8f97915c392da86461a72225de1a
https://doi.org/10.1063/1.346701
https://doi.org/10.1063/1.346701
Autor:
T. Humer‐Hager, H. Tews
Publikováno v:
Journal of Applied Physics. 68:1310-1317
Detailed 77‐K and temperature‐dependent photoluminescence (PL) investigations of heterojunction bipolar transistor (HBT) structures grown by low‐pressure metalorganic vapor‐phase epitaxy are presented. HBT layer sequences with GaAs base and w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565a47ac94e8869f040a62cd4af61d64
https://doi.org/10.1063/1.346700
https://doi.org/10.1063/1.346700