Zobrazeno 1 - 10
of 46
pro vyhledávání: '"H. T. Weaver"'
Autor:
B. H. Rose, H. T. Weaver
Publikováno v:
Journal of Applied Physics. 54:238-247
A mathematical analysis for minority‐carrier diffusion in a solar cell base is used to extract bulk lifetime τ and effective back‐surface recombination velocity S from measurements of asymptotic decay times of short‐circuit current and open‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeddbf34fcd7933c20b5a2b98a497af4
https://doi.org/10.1063/1.331693
https://doi.org/10.1063/1.331693
Autor:
H. T. Weaver, J. E. Schirber
Publikováno v:
Physical Review B. 18:973-976
Anomalous temperature and pressure dependences for the /sup 75/As Knight shift in CeAs are interpreted within the framework of Hirst's model for fluctuating valence. A 30-K-wide peak in the density of states, located 85 K below E/sub F/, is inferred
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2c3ad2f66770e613ecded4fcd8fce3
https://doi.org/10.1103/physrevb.18.973
https://doi.org/10.1103/physrevb.18.973
Autor:
H. T. Weaver, J. E. Schirber
Publikováno v:
Physical Review B. 13:1363-1369
Nuclear-magnetic-resonance (NMR) measurements as a function of temperature and pressure have been made of the Knight shift $K$ of $^{31}\mathrm{P}$ and $^{75}\mathrm{As}$ contained in CeP and CeAs, respectively. The pressure derivative of $K$ ($\frac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f6c20fcaa57a538c72d95c89bc1f46
https://doi.org/10.1103/physrevb.13.1363
https://doi.org/10.1103/physrevb.13.1363
Autor:
William J. Camp, H. T. Weaver
Publikováno v:
Physical Review B. 12:3054-3059
We present measurements of NMR line shapes and relaxation times for $^{3}\mathrm{H}$ nuclei and their $\ensuremath{\beta}$-decay products $^{3}\mathrm{He}$ in aged samples of titanium tritide ($\mathrm{Ti}^{3}\mathrm{H}_{x}$). Data were obtained on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4a9c09c5205c61133fe2ef8b554cf44
https://doi.org/10.1103/physrevb.12.3054
https://doi.org/10.1103/physrevb.12.3054
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1577-1580
SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3870163dc3d1669b29889886d07b70
https://doi.org/10.1109/tns.1986.4334644
https://doi.org/10.1109/tns.1986.4334644
Publikováno v:
IEEE Transactions on Nuclear Science. 32:4145-4149
Single event upset (SEU) simulations in SRAM cells have been carried out and the results are compared to experimental data on 16K bit memories. The simulations consisted of simultaneous calculations of charge transport and transient circuit response
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce6b5728cec2d39ab17e3d0b150dfbe
https://doi.org/10.1109/tns.1985.4334083
https://doi.org/10.1109/tns.1985.4334083
Autor:
Rod K. Quinn, H. T. Weaver
Publikováno v:
Physical Review B. 10:1816-1822
Low-temperature [$T\ensuremath{\approx}(1\ensuremath{-}4)$\ifmmode^\circ\else\textdegree\fi{}K] measurements of the Knight shift and spin-lattice relaxation time for $^{103}\mathrm{Rh}$ and $^{195}\mathrm{Pt}$ in ${\mathrm{Pt}}_{1\ensuremath{-}x}{\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8856b4ac0bd02720bd60e231b363d648
https://doi.org/10.1103/physrevb.10.1816
https://doi.org/10.1103/physrevb.10.1816
Publikováno v:
IEEE Transactions on Nuclear Science. 34:1322-1325
We report theoretical calculations and experimental verification of an increase in memory cell SEU tolerance when Sandia's 2?m-technology 16K SRAMs are fabricated with a radiation-hardened 1-?m CMOS process. An advanced 2D transient transport-plus-ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f3e5a4a36e2c25b7dadaf184bd1dee
https://doi.org/10.1109/tns.1987.4337473
https://doi.org/10.1109/tns.1987.4337473
Publikováno v:
IEEE Transactions on Nuclear Science. 34:1686-1691
Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. We compare the radiation responses of transistors with three type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c74b0956d12359e516bd1706c751de
https://doi.org/10.1109/tns.1987.4337537
https://doi.org/10.1109/tns.1987.4337537
Autor:
Rod K. Quinn, H. T. Weaver
Publikováno v:
Journal of Solid State Chemistry. 16:197-200
Magnetic susceptibility and nuclear resonance of 31P studies have been made for TbxY1−xP (x = 0.005, 0.05, 0.10, and 0.30) in the temperature range from 4 to 300°K. In this concentration range cooperative magnetic effects are small and the suscept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409754639f655f518194e2f3661c523a
https://doi.org/10.1016/0022-4596(76)90023-2
https://doi.org/10.1016/0022-4596(76)90023-2