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Publikováno v:
Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, Vol 129, Iss 1D, Pp 71-75 (2020)
This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the freq
Externí odkaz:
https://doaj.org/article/2a4a0f2548f7409c8f16d4914bb9227c
