Zobrazeno 1 - 10
of 83
pro vyhledávání: '"H. Selke"'
Autor:
K. Leonardi, Jens Falta, H. Selke, H. Heinke, Th. Schmidt, A Stockmann, Detlef Hommel, T. Passow
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1208-1211
The intermixing and stacking fault formation for CdSe/ZnSe quantum dot structures grown on GaAs(0 0 1) by molecular beam epitaxy (MBE) were systematically investigated by high-resolution X-ray diffraction, grazing incidence X-ray diffraction and high
Publikováno v:
Journal of Physics D: Applied Physics. 34:A25-A29
GaN(0001) epitaxial layers were grown by molecular beam epitaxy on a few-nanometres thick low-temperature GaN nucleation layers on c-plane sapphire. Despite extremely high densities of extended defects, the layers show a narrow (002) x-ray diffractio
Autor:
Martin Vehse, Sarah L. Keller, H. Selke, Jürgen Gutowski, Peter Michler, Stephan Figge, Detlef Hommel, Steven P. DenBaars
Publikováno v:
Semiconductor Science and Technology. 16:406-412
The influence of composition and well-width fluctuations on the optical gain in (In, Ga)N multiple quantum wells for different barrier dopings and compositions is studied under quasistationary conditions. Systematic temperature- and excitation-densit
Publikováno v:
Journal of Crystal Growth. :602-605
Optical and structural properties of ZnCdSe quantum wells (QWs) grown by either migration-enhanced epitaxy (MEE) or molecular beam epitaxy (MBE) have been compared. Firstly the QWs are grown by depositing Zn and Cd at the same time during MEE. These
Publikováno v:
Journal of Crystal Growth. :585-589
Nominally binary CdSe quantum wells (QWs) with thicknesses from 1.0 to 2.5 monolayers embedded in ZnSe were grown by molecular beam epitaxy on GaAs(0 0 1) substrates. The investigation of the samples by high-resolution X-ray diffraction (HRXRD) and h
Publikováno v:
Journal of Crystal Growth. 208:57-64
Using electron and X-ray diffraction techniques as well as high-resolution transmission electron microscopy, a rhombohedral phase with the lattice parameters a =0.3183 nm and c =2.338 nm has been identified in gallium nitride (GaN) epilayers grown on
Autor:
Detlef Hommel, Stephan Figge, M. Fehrer, P. L. Ryder, H. Heinke, Sven Einfeldt, H. Selke, V. Kirchner
Publikováno v:
physica status solidi (b). 216:659-662
Screw and edge dislocation densities were estimated from X-ray diffraction profiles of GaN layers grown by molecular beam epitaxy. The results were confirmed by transmission electron microscopy. The layers had varying thicknesses or were deposited on
Autor:
Jürgen Gutowski, S. Hommel, Martin Vehse, Peter Michler, Sarah L. Keller, Stephan Figge, H. Selke, Steven P. DenBaars, P. L. Ryder
Publikováno v:
physica status solidi (b). 216:331-334
The influence of barrier doping and barrier composition on the optical gain in (In, Ga)N multiple quantum wells is studied under stationary conditions. Systematic temperature dependent gain measurements are performed by means of the variable-stripe-l
Publikováno v:
Materials Science and Engineering: B. 59:47-51
The influence of low temperature buffer layers on the structural characteristics of GaN grown by molecular beam epitaxy on sapphire (0001) substrates was investigated. Layers grown on GaN and AlN buffers were studied by high-resolution X-ray diffract
Autor:
Juergen Christen, Detlef Hommel, P. L. Ryder, H. Selke, Frank Bertram, Sven Einfeldt, M Amirsawadkouhi, T. Böttcher
Publikováno v:
Materials Science and Engineering: B. 59:279-282
The structural and optical properties of InGaN epilayers grown by different molecular beam epitaxy (MBE) techniques were studied with high spatial resolution. Mappings of the local emission wavelength obtained by cathodoluminescence (CL) spectroscopy