Zobrazeno 1 - 10
of 75
pro vyhledávání: '"H. Schellevis"'
Publikováno v:
APL Materials, Vol 2, Iss 10, Pp 100702-100702-9 (2014)
In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few
Externí odkaz:
https://doaj.org/article/71fe3e5e6deb443f8bbd296af214ba91
Publikováno v:
Microelectronic Engineering. 33:129-135
The mechanical behaviour of AlV(0.1 at%)Pd(0.1 at%) films during thermal cycling is studied. Apart from films line patterns have also been studied. Passivated and unpassivated line patterns covering the whole wafer were produced. The curvature in lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad39a96f35ef7cad2b3c79493d05140
https://doi.org/10.1016/s0167-9317(96)00038-x
https://doi.org/10.1016/s0167-9317(96)00038-x
Autor:
H. Schellevis, V. Aravindh, Tuncay Alan, Gregory Pandraud, A.T. Tran, O. Wunnicke, Pasqualina M. Sarro
Publikováno v:
Procedia Engineering, 25, 2011
Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fde6e3bcf00bf2e95eb4845a87baef44
http://resolver.tudelft.nl/uuid:8f838753-0647-43a6-856f-1b1201ee36ef
http://resolver.tudelft.nl/uuid:8f838753-0647-43a6-856f-1b1201ee36ef
Publikováno v:
Procedia Engineering, 5, 2010
Aluminum Nitride thin films with the desired properties for piezoelectric actuators are grown by pulsed DC sputtering on Si (100) substrates coated with different seed layers (Al/1%Si, Mo, Ti). The influence of sputtering parameters and the seed laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::084946c9abdeb252fb73992ade1b96a0
http://resolver.tudelft.nl/uuid:81a8dbd9-6275-4579-9f0f-359600328291
http://resolver.tudelft.nl/uuid:81a8dbd9-6275-4579-9f0f-359600328291
Autor:
Cassan C. C. Visser, A. Nichelatti, Lianwei Wang, C.R. de Boer, H. Schellevis, T.N. Nguyen, Pasqualina M. Sarro
Publikováno v:
The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE.
Closely spaced, through-wafer interconnects are of large interest in RF MEMS and MEMS packaging. In this paper, a suitable technique to realize large arrays of small size through-wafer holes is presented. This approach is based on macroporous silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645e2a2770eced531362d216cf3caa43
https://doi.org/10.1109/memsys.2003.1189829
https://doi.org/10.1109/memsys.2003.1189829
Autor:
H. van Bekkum, C.I.N. Beenakker, H. Schellevis, Jacob A. Moulijn, M.J. den Exter, Freek Kapteijn, C.J.M. Rijn
Publikováno v:
Zeolites, 19(1), 13-20. Elsevier
Scopus-Elsevier
Scopus-Elsevier
Silicalite-1 is grown as b- and (a, b)-oriented monolayers on silicon wafers and on silicon wafers containing low-stress silicon nitride windows, aiming at two new membrane systems. The orientation of crystals determines the stability (crack formatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2aae308a8f289fcb53eb4a93e7a76d3
https://research.utwente.nl/en/publications/41c0c696-1e4f-45f6-b756-4df752666826
https://research.utwente.nl/en/publications/41c0c696-1e4f-45f6-b756-4df752666826
Publikováno v:
APPLIED PHYSICS LETTERS, 101(25), 252601
Applied Physics Letters, 101 (25), 2012
BASE-Bielefeld Academic Search Engine
Applied Physics Letters, 101 (25), 2012
BASE-Bielefeld Academic Search Engine
The low frequency complex impedance of a high resistivity 92 {\mu}{\Omega} cm and 100 nm thick TiN superconducting film has been measured via the transmission of several high sensitivity GHz microresonators, down to Tc/50. The temperature dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f27786a0917872df78372703256092a5
https://doi.org/10.1063/1.4771995
https://doi.org/10.1063/1.4771995
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Akademický článek
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