Zobrazeno 1 - 10
of 34
pro vyhledávání: '"H. Salow"'
Publikováno v:
Advanced Microsystems for Automotive Applications 2006 ISBN: 3540334092
Most collisions occur with ahead driving vehicles or at speed below 30 km/h, respectively. Driving in columns is tiring and can lead to inattention and distraction and is therefore one of the main sources of accidents. A Low Speed Collision Avoidance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d81d869918b169db95e8640cedaa2d
https://doi.org/10.1007/3-540-33410-6_10
https://doi.org/10.1007/3-540-33410-6_10
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 44:543-549
To analyse highly diluted samples of nuclear reprocessing plants outside hot cells, and to minimize the risks of radiation on operators and materials, a multielement determination method with low detection limits is required. Total Reflection X-Ray F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37585e69f7134ce26dac87aa0db40b94
https://doi.org/10.1016/0584-8547(89)80062-x
https://doi.org/10.1016/0584-8547(89)80062-x
Publikováno v:
Zeitschrift f�r Physik B Condensed Matter and Quanta. 24:361-365
Measurements of the resistivity and magnetoresistance of epitaxially grownn-type GaAs (N D ~ 1–2 × 1015 cm−3) at 4.2 K and below are reported. The hopping resistivityρ 3 depends onN D according toρ 3=ρ 0 exp (1.88/N 1/3 a) in agreement with p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e79c5d0d20cddbf4312a10af2757c45
https://doi.org/10.1007/bf01351525
https://doi.org/10.1007/bf01351525
Publikováno v:
IEEE Transactions on Communications. 22:1435-1440
The conditions for circuit integration with anodetriggered Gunn devices and Schottky-gate controlled Gunn devices on epitaxial GaAs layers are examined. Thin epitaxial layers with homogeneous mobility and carrier-concentration profiles perpendicular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8224903596967a6059f4719200b7523
https://doi.org/10.1109/tcom.1974.1092401
https://doi.org/10.1109/tcom.1974.1092401
Publikováno v:
IEEE Journal of Solid-State Circuits. 10:2-12
Monolithic integration of planar Gunn devices on GaAs is a very promising method to realize microcircuits for the Gbit/s range. Semiinsulating GaAs is readily available as substrate material. In this paper estimates of characteristic parameters of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b15a5d4ca8a9252395c49507f2bb52d
https://doi.org/10.1109/jssc.1975.1050547
https://doi.org/10.1109/jssc.1975.1050547
Autor:
W. Steiner, H. Salow
Publikováno v:
Zeitschrift für Physik. 99:137-158
Es werden die Wellenlangen der Maxima, die Bandenform und die Intensitat der Absorption der Sauerstoffbanden zwischen 6299 und 3150 A gemessen in ihrer Abhangigkeit vom Eigendruok zwischen 40 und 160 Atm. und vom Fremdgaszusatz bis zu 100 Atm. Wahren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b4e01e5ebfb91024ac4f4460a7e191
https://doi.org/10.1007/bf01847820
https://doi.org/10.1007/bf01847820
Autor:
H. Salow
Publikováno v:
Annalen der Physik. 440:417-428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb0f222083ded384d1e44b87701ca2c
https://doi.org/10.1002/andp.19504400611
https://doi.org/10.1002/andp.19504400611
Publikováno v:
Proceedings of the Twelfth International Conference on the Physics of Semiconductors ISBN: 9783519030133
Magnetotransport properties of epitaxially grown n-GaAs were investigated between 1.6 and 10 K in magnetic fields up to 60 kG. Below 5 K the dominant conduction mechanism is the hopping process. The hopping resistivity ρ3 depends on the donor concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c9a1903bcbb18e77ef96ee8e8ed23f
https://doi.org/10.1007/978-3-322-94774-1_45
https://doi.org/10.1007/978-3-322-94774-1_45
Publikováno v:
Halbleiterprobleme ISBN: 9783540752950
Starting from the basic linear equations between the currents and voltages of a transistor, its fourpole properties are derived and general formulare for adaption and amplification are presented. The dependence of the resistance matrix on the work. i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ea79ea41364e3e65b21b73dc171db3
https://doi.org/10.1007/bfb0116883
https://doi.org/10.1007/bfb0116883