Zobrazeno 1 - 10
of 78
pro vyhledávání: '"H. S. Veloric"'
Autor:
H. S. Veloric, J. H. Forster
Publikováno v:
Journal of Applied Physics. 30:906-914
A filamentary structure has been used to compare the electrical properties of a germanium surface with those of an adjacent p‐n junction intersecting the same surface. Surface charge is varied by field effect plates in the isolated portion of the f
Publikováno v:
Journal of Applied Physics. 27:895-899
A method is presented for controlling the reverse breakdown voltage (VB) in a silicon graded junction. The significant process parameters are shown to be resistivity, time of diffusion, and temperature of diffusion. For a constant resistivity, VB inc
Autor:
M. B. Prince, H. S. Veloric
Publikováno v:
Bell System Technical Journal. 36:975-1004
Silicon power rectifiers have been made which have reverse breakdown voltages as high as 2,000 volts and forward characteristics comparable to those obtained in much lower voltage devices. It is shown that the magnitude and temperature dependence of
Publikováno v:
Journal of The Electrochemical Society. 115:356C
Autor:
K. D. Smith, H. S. Veloric
Publikováno v:
Journal of The Electrochemical Society. 104:222
Publikováno v:
Journal of Applied Physics; Aug1956, Vol. 27 Issue 8, p895-899, 5p
Autor:
Mayer, J. W.
Publikováno v:
Journal of Applied Physics; Sep1962, Vol. 33 Issue 9, p2894-2902, 9p
Autor:
Sandiford, D. J.
Publikováno v:
Journal of Applied Physics; Dec1959, Vol. 30 Issue 12, p1981-1986, 6p
Autor:
Forster, J. H., Veloric, H. S.
Publikováno v:
Journal of Applied Physics; Jun1959, Vol. 30 Issue 6, p906-914, 9p
Autor:
Batdorf, R. L., Smits, F. M.
Publikováno v:
Journal of Applied Physics; Feb1959, Vol. 30 Issue 2, p259-264, 6p