Zobrazeno 1 - 10
of 44
pro vyhledávání: '"H. S. Newman"'
Autor:
Michael B. Steer, Steve Gross, W.D. Palmer, David M. Kirkwood, H. S. Newman, Scooter D. Johnson
Publikováno v:
IEEE Microwave Magazine. 20:36-50
Magnetic materials and components play a critical role in the technology we use in our daily lives. Many things, from electric motors to data storage, radar, and communication systems, rely on the properties of magnetic materials. The inherent physic
Autor:
H. S. Newman, Charles R. Eddy, Marko J. Tadjer, Scooter D. Johnson, Evan R. Glaser, Shu-Fan Cheng, Fritz J. Kub
Publikováno v:
IEEE Transactions on Magnetics. 51:1-6
We have employed aerosol deposition (AD) to deposit 39 µm thick polycrystalline films of yttrium iron garnet at room temperature onto sapphire at a rate of 1‐3 µm/min as an initial investigation of utilizing AD for fabricating ferrite-integrated
Publikováno v:
Solid-State Electronics. 67:105-108
Sb-based pN heterojunction diodes at 6.2 A, consisting of narrow bandgap p -type In 0.27 Ga 0.73 Sb and wide bandgap n -type In 0.69 Al 0.41 As 0.41 Sb 0.59 , have been fabricated and measured. These diodes show excellent electrical characteristics w
Publikováno v:
IEEE Microwave Magazine. 12:14-57
The International Microwave Symposium (IMS) continues to be the largest and most prestigious IEEE microwave conference in the world, bringing together international experts to showcase the most advanced research, development, and innovations in RF, m
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material
Publikováno v:
Solid-State Electronics. 52:1829-1832
InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current–voltage and capacitance–voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thic
Publikováno v:
IEEE Microwave Magazine. 8:76-88
This article surveys a variety of tests and measurements that have been used for switch and relay characterization, and it describes their strengths, weaknesses, and applicability in the design and development process.
Autor:
Peter G. Goetz, H. S. Newman, Todd H. Stievater, David J. McGee, J. L. Ebel, W. S. Rabinovich, R. Mahon
Publikováno v:
Journal of Microelectromechanical Systems. 12:109-116
We have developed a high resolution optical technique to measure the electromechanical properties of MEMS microstructures. The technique is applied to microbridges developed for capacitive switching in coplanar radio frequency (RF) waveguides. The th
Autor:
Scooter D. Johnson, Christopher Gonzalez, Zachary R. Robinson, Sanghoon Shin, H. S. Newman, Syed B. Qadri, Virginia R. Anderson
Publikováno v:
Journal of Applied Physics. 122:024901
We report structural, compositional, and magnetic properties for a commercially available doped barium hexaferrite material produced by Temex Ceramics. The material is designed to absorb electromagnetic radiation near the upper edge of the Ku frequen
Autor:
Douglas B. Chrisey, S. B. Qadri, Steven W. Kirchoefer, Won-Jeong Kim, H. D. Wu, H. S. Newman, Jeffrey M. Pond, James S. Horwitz, Wontae Chang
Publikováno v:
Applied Physics A. 71:7-10
Ferroelectric (Ba0.6Sr0.4)TiO3 (BST) thin films have been deposited by pulsed laser deposition onto single-crystal Y3Fe5O12 (YIG) substrates with/without a MgO buffer layer. The structure and microwave properties of the BST films have been investigat
Autor:
David L. Knies, Douglas B. Chrisey, Peter Lubitz, Michael M. Miller, H. S. Newman, Alberto Piqué, J. S. Horwitz, H. Kim
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3111-3114
Oriented and single phase Ba2Zn2Fe12O22 (Zn2Y) thin films (∼5000 A thick) have been grown using pulsed laser deposition (ArF, 193 nm) on single-crystal (0001) sapphire substrates. A single phase polycrystalline Zn2Y target was used to deposit films