Zobrazeno 1 - 10
of 32
pro vyhledávání: '"H. S. Mavi"'
Publikováno v:
Silicon. 2:25-31
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee43ca922f8bf9237d0b9650f5d2bf6a
https://doi.org/10.1007/s12633-009-9033-z
https://doi.org/10.1007/s12633-009-9033-z
Autor:
Vinita Kumari, Bipin Joshi, Ashok Kumar Shukla, H. S. Mavi, Harsh, Tarikul Islam, S. S. Islam
Publikováno v:
Bulletin of Materials Science. 32:31-35
The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure under super- and sub-bandgap photon illumination (h v). The etching mechanism is different for these separate illuminations where defect states play
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea38fd61acfa7533eb2ab5d3b6a8e680
https://doi.org/10.1007/s12034-009-0005-0
https://doi.org/10.1007/s12034-009-0005-0
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 41:690-694
The size-selective laser-induced etching of semi-insulating GaAs 〈1 0 0〉 is carried out to create a porous structure by varying the laser beam exposure time. The etch-time dependent photoluminescence (PL) spectroscopy results show that a direct t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec28b37fa8e4679fa5fac853e7b14cf
https://doi.org/10.1016/j.physe.2008.11.010
https://doi.org/10.1016/j.physe.2008.11.010
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:2904-2910
Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::928d6c6451e538704112531647c58e42
https://doi.org/10.1016/j.physe.2008.02.007
https://doi.org/10.1016/j.physe.2008.02.007
Publikováno v:
Nanoscale Research Letters, Vol 3, Iss 3, Pp 105-108 (2008)
Nanoscale Research Letters
Nanoscale Research Letters
Photo-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructures (NSs) prepared by laser-induced etching are presented here. Asymmetric and red-shifted Raman line-shapes are observed due to photo-excited Fano interactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3691a1fd43e6d4cf2417e79bec39721a
https://doaj.org/article/0289b695fedd4e81a0b82aeb4c5f4f76
https://doaj.org/article/0289b695fedd4e81a0b82aeb4c5f4f76
Autor:
D. Kabiraj, H. S. Mavi, A.K. Shukla, Kirti Jain, Manoj Kumar, D.K. Avasthi, Shyama Rath, A. K. Tripathi
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 263:419-423
Ge oxide films were irradiated with 150 MeV Ag ions at fluences varying between 10 12 and 10 14 ions/cm 2 . The irradiation-induced changes were monitored by FT-IR spectroscopy, atomic force microscopy, X-ray diffraction and photoluminescence spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabeb4bf979a16d72373162d6eb6416e
https://doi.org/10.1016/j.nimb.2007.07.018
https://doi.org/10.1016/j.nimb.2007.07.018
Publikováno v:
Bulletin of Materials Science. 30:295-299
The industrial use of carbon nanotubes is increasing day by day; therefore, it is very important to identify the nature of carbon nanotubes in a bundle. In this study, we have used the Raman spectroscopic analysis on vertically aligned single-walled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3711e4273151c487a9f8e638ccad03
https://doi.org/10.1007/s12034-007-0049-y
https://doi.org/10.1007/s12034-007-0049-y
Publikováno v:
Semiconductor Science and Technology. 21:1627-1632
A comparative study of quantum confinement of electrons and phonons in silicon nanocrystals produced by laser-induced etching on a silicon (Si) substrate and continuous wave (cw) laser-induced crystallization in a-Si:H film on a quartz substrate is p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::288c1edce6ee1642e0eec18b7d5feced
https://doi.org/10.1088/0268-1242/21/12/021
https://doi.org/10.1088/0268-1242/21/12/021
Publikováno v:
physica status solidi (a). 203:2444-2450
Department of Physics and Astrophysics, University of Delhi, Delhi – 110007, India Received 24 May 2005, revised 16 May 2006, accepted 1 June 2006 Published online 8 August 2006 PACS 63.22.+m, 68.37.Ps, 78.55.Ap, 78.67.–n, 81.07.–b, 81.65.Cf Qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7e28ebbac8becd01dd9bc2d061bd4a
https://doi.org/10.1002/pssa.200521027
https://doi.org/10.1002/pssa.200521027
Publikováno v:
Journal of Non-Crystalline Solids. 352:2236-2242
We have investigated the etching mechanism in Cr–O doped GaAs wafer under super- and sub-bandgap photon illumination. A comparison of the etching rate and properties of nanostructures from two samples which are etched with argon-ion laser (2.41 eV)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cadbb2e21138b6dd4723b3ac41410d7f
https://doi.org/10.1016/j.jnoncrysol.2006.02.046
https://doi.org/10.1016/j.jnoncrysol.2006.02.046