Zobrazeno 1 - 10
of 19
pro vyhledávání: '"H. S. Funk"'
Publikováno v:
IEEE Transactions on Nanotechnology. 20:346-355
The quest for the high speed, low power digital logic circuits urge an imperative demand of compatible high-κ dielectric integration on novel Germanium (Ge) based channel material. Here, first ever a methodical nanoscopic and microscopic probes were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a42ee280ea895759de288b99612d87
https://doi.org/10.1109/tnano.2021.3069820
https://doi.org/10.1109/tnano.2021.3069820
Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
Autor:
Gerda Fischer, Michael Oehme, Joris van Slageren, H. S. Funk, Christoph Sürgers, Jörg Schulze, David Weisshaupt, D. Schwarz, Inga A. Fischer
Publikováno v:
MIPRO
Ge two-dimensional hole gases (2DHG) formed in strained, modulation-doped quantum-wells are highly suitable for future spintronic applications due to their good electronic transport properties. For electrical spin injection into a Ge 2DHG, the ferrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866fa45fc547794e2897f39c75986ce7
https://doi.org/10.23919/mipro52101.2021.9596924
https://doi.org/10.23919/mipro52101.2021.9596924
Autor:
D. Schwarz, V. Kiyek, David Weisshaupt, S. C. Schafer, Joerg Schulze, Viktoria Schlykow, Michael Oehme, H. S. Funk, Dan Buca, L. Seidel
Publikováno v:
MIPRO
The binary alloy semiconductor $\text{Ge}_{1-\mathrm{x}}\text{Sn}_{\mathrm{x}}$ is a promising candidate for the monolithic integration of optoelectronic circuits on Si due to its reported direct bandgap at specific Sn concentration and strain. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67a849eee0778528f388664d95e5b8d
https://doi.org/10.23919/mipro52101.2021.9596634
https://doi.org/10.23919/mipro52101.2021.9596634
Publikováno v:
MIPRO
Recent developments in quantum electronics, particularly spin-qubit systems and semiconductor spintronics, provide new applications for micromagnets. The stray field of properly placed micromagnets can be employed to manipulate spin-qubits using rf-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e3f9634ccabbf9c4597d6384f94519
https://doi.org/10.23919/mipro52101.2021.9596763
https://doi.org/10.23919/mipro52101.2021.9596763
Publikováno v:
MIPRO
Strained modulation-doped quantum wells (QW) offer a huge potential for semiconductor device applications due to their high mobility. The material Ge is particularly interesting here, exhibiting the highest bulk hole-mobility of all known semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::099f23af13df05633c366c750730b2b7
https://doi.org/10.23919/mipro52101.2021.9597145
https://doi.org/10.23919/mipro52101.2021.9597145
Autor:
Joerg Schulze, H. S. Funk, D. Weibhaupt, D. Schwarz, L. Seidel, Michael Oehme, F. Berkmann, A. Causevic
Publikováno v:
MIPRO
The combination of the ternary alloy Si x Ge l-x-y Sn y with Gel -y Sn y is very promising for electrooptical applications in the near infrared regime up to 2.5 µm wavelength. With the tunable bandgap at a non-varying lattice constant SixGe l-x-y Sn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98e223c30408f5f0ac19aa0d4081c3e
https://doi.org/10.23919/mipro52101.2021.9597082
https://doi.org/10.23919/mipro52101.2021.9597082
Autor:
Joris van Slageren, Michael Oehme, H. S. Funk, David Weisshaupt, Michal Kern, Inga A. Fischer, Jörg Schulze, Christoph Sürgers
Publikováno v:
ECS Transactions. 93:101-104
We report on the first synthesis of a Mn based ferromagnet on SixGe(1-x-y)Sny lattice matched on Ge with Sn content up to 15 %. The ferromagnetic layers were grown using interdiffusion of evaporated Mn and epitaxially grown SixGe(1-x-y)Sny. The Si to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2804ab9b546c482e7f8f275dc0f94047
https://doi.org/10.1149/09301.0101ecst
https://doi.org/10.1149/09301.0101ecst
Autor:
Adele Marchionni, Franco Ciccacci, Federico Bottegoni, Joerg Schulze, Michael Oehme, D. Schwarz, H. S. Funk, Marco Finazzi, Carlo Zucchetti
Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising candidate for the integration of spintronics, photonics, and electronics. Here, we investigate the photoinduced inverse spin-Hall effect in a GeSn alloy with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3dccb8996a5f7d7daf8dac2c80c6572
http://hdl.handle.net/11311/1174046
http://hdl.handle.net/11311/1174046
Autor:
David Weißhaupt, Inga A. Fischer, Michael Oehme, Joris van Slageren, Michal Kern, H. S. Funk, Christoph Sürgers, Jörg Schulze
Publikováno v:
Journal of Magnetism and Magnetic Materials. 546:168731
We report on the structure and magnetic properties of Mn based ferromagnetic layers on the semiconductor SixGe1-x-ySny with Sn content up to y = 0.15 in comparison with layers on Ge and Si0.75Ge0.25. The ferromagnetic layers grow by interdiffusion be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd58b776924d93a24e9435f5ba328441
https://doi.org/10.1016/j.jmmm.2021.168731
https://doi.org/10.1016/j.jmmm.2021.168731
Publikováno v:
MIPRO
Since we have previously shown that the deposition of pure Boron (PureB) on Silicon (Si) forms an almost ideal pn-junction, the next step is to utilize this technology towards a high-speed pnp bipolar junction transistor (BJT) made from Si. Here, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6fc68dd611442f8fe5b81a307db00dc
https://doi.org/10.23919/mipro48935.2020.9245196
https://doi.org/10.23919/mipro48935.2020.9245196