Zobrazeno 1 - 10
of 14
pro vyhledávání: '"H. S. Craft"'
Autor:
Raoul Schlesser, John E. Northrup, Z. Yang, H. S. Craft, G. A. Garrett, Michael Kneissl, N. M. Johnson, Rafael Dalmau, Thomas Wunderer, Baxter Moody, Christopher L. Chua, Zlatko Sitar, H. Shen, M. Wraback
Publikováno v:
physica status solidi c. 9:822-825
Sub-300 nm optically pumped ultraviolet lasers were realized on low-defect-density (0001) AlN substrates fabricated from single crystalline AlN boules. The AlxGa1–xN/AlyGa1–yN hetero-structures were grown by metal-organic vapor phase epitaxy near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79400388b5aa470f9773979c25255b0c
https://doi.org/10.1002/pssc.201100424
https://doi.org/10.1002/pssc.201100424
Autor:
David A. Muller, Zlatko Sitar, L. Fitting Kourkoutis, Seiji Mita, Mark D. Losego, H. S. Craft, Jon Paul Maria, Ramon Collazo
Publikováno v:
Journal of Crystal Growth. 311:1106-1109
Epitaxial heterostructures incorporating the complex ferroelectric oxide Ba 0.5 Sr 0.5 TiO 3 (BST) and GaN were prepared using a combination of RF magnetron sputtering and metalorganic chemical vapor deposition for the respective layers. The heterost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0527db7394650aebe5f3169933ed597f
https://doi.org/10.1016/j.jcrysgro.2008.11.085
https://doi.org/10.1016/j.jcrysgro.2008.11.085
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1507-1510
The authors report a study comparing the surface reactivities of the alkaline earth oxides MgO and CaO with respect to water vapor under ultrahigh and high vacuum conditions. Using x-ray photoelectron spectroscopy and a series of in vacuo exposures s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064cdaca0db4a7dc5e7137da4bfea1fb
https://doi.org/10.1116/1.3000058
https://doi.org/10.1116/1.3000058
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb381a65307b9576dc766607e2344ea
https://doi.org/10.1109/isaf.2008.4693846
https://doi.org/10.1109/isaf.2008.4693846
Autor:
H. S. Craft, Mark D. Losego, Ramon Collazo, Zlatko Sitar, Elizabeth A. Paisley, Jon Paul Maria, Haidong Lu, Alexei Gruverman
Publikováno v:
Journal of Applied Physics. 114:239901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603bed0467493dafbaf478f474224300
https://doi.org/10.1063/1.4842135
https://doi.org/10.1063/1.4842135
Autor:
H. S. Craft, Zlatko Sitar, Jon Paul Maria, Haidong Lu, Ramon Collazo, Mark D. Losego, Elizabeth A. Paisley, Alexei Gruverman
Publikováno v:
Journal of Applied Physics. 113:074107
Epitaxial integration of PbxZr1−xTiO3 (PZT) (111) with GaN (0002) presents the possibility of polarity coupling across a functional-oxide/nitride heteropolar interface. This work describes the synthesis and characterization of such thin film hetero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac3105fa3462e80c2830c0115cafce5c
https://doi.org/10.1063/1.4792599
https://doi.org/10.1063/1.4792599
Publikováno v:
Applied Physics Letters. 98:082110
We report on the surface stoichiometry of Ga-polar GaN films grown by metalorganic chemical vapor deposition as studied by x-ray photoelectron spectroscopy. GaN film surfaces are found to be Ga-rich, with Ga:N ratios ranging from 1.3:1 to 3.2:1. In v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90fb1e99f21dd814bc9175c1f19a193f
https://doi.org/10.1063/1.3554762
https://doi.org/10.1063/1.3554762
Publikováno v:
Journal of Applied Physics. 104:114110
A peak permittivity greater than 10 000 has been achieved for calcium copper titanate (CCT) thin films by engineering a thin film microstructure that maximizes space charge contributions to polarizability. This permittivity is an order of magnitude g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88d9c422eb95fda499742ae0a38e7133
https://doi.org/10.1063/1.3033166
https://doi.org/10.1063/1.3033166
Publikováno v:
Applied Physics Letters. 92:082907
We report an x-ray photoelectron spectroscopy (XPS) study of the CaO∕GaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski–Krastanov growth, in which CaO coalesces rapidly, then c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd0b8eb981f17691b4287eeef94dc32
https://doi.org/10.1063/1.2887878
https://doi.org/10.1063/1.2887878
Publikováno v:
Journal of Applied Physics. 102:074104
MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6949145686613f618cd2c89cd1a0e7c
https://doi.org/10.1063/1.2785022
https://doi.org/10.1063/1.2785022