Zobrazeno 1 - 10
of 44
pro vyhledávání: '"H. S≸lan"'
Publikováno v:
Physical Review B. 95
Electronic structures of ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ alloys $(0\ensuremath{\le}x\ensuremath{\le}1)$ are theoretically studied by the nonlocal empirical pseudopotential method. For relaxed ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23be857273d8a671a826078ed188491f
https://doi.org/10.1103/physrevb.95.201201
https://doi.org/10.1103/physrevb.95.201201
Publikováno v:
ECS Transactions. 41:53-58
The transition levels of oxygen vacancy (Vo) in GeO2 with different charge state are calculated by first principle method. The formation energy of GeO2 indicate there is a (+2/0) fix charge state in bulk GeO2. The (+1/0) transition level near Ge vale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0bb1edfc34d9743e25c6529fd977bc8
https://doi.org/10.1149/1.3633020
https://doi.org/10.1149/1.3633020
Publikováno v:
Journal of Pressure Vessel Technology. 114:39-45
The accuracy of a new integration algorithm is examined for a von Mises-type model of thermal-elastic-plasticity with nonlinear, mixed isotropic-kinematic hardening. The algorithm is founded on the frame of an integral representation of the conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0408195f348e6b32c7e8668f0e1c7841
https://doi.org/10.1115/1.2929010
https://doi.org/10.1115/1.2929010
Akademický článek
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Autor:
H.-S. Lan, Chee-Wee Liu
Publikováno v:
Applied Physics Letters. 104:192101
The dependence of ballistic electron current on Sn content, sidewall orientations, fin width, and uniaxial stress is theoretically studied for the GeSn fin field-effect transistors. Alloying Sn increases the direct Г valley occupancy and enhances th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7131df4dbfce989ce96ea6cadeb2bee
https://doi.org/10.1063/1.4876441
https://doi.org/10.1063/1.4876441
Autor:
P. Østergård, A. M. Brodersen, A. Krasnik, I. Sahl, P. Treuleldt, Helle Charlotte Knudsen, Birgit Jessen-Petersen, H. S≸lan, P. Løppenthin, Merete Nordentoft
Publikováno v:
Social psychiatry and psychiatric epidemiology. 32(7)
The main purpose of the study was to describe the characteristics of homeless psychiatric patients, and to compare the treatment they are offered to that offered to domiciled patients by the psychiatric services. Another purpose was to analyse the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0a7dd243e344ac159b1b205c94114ea
https://pubmed.ncbi.nlm.nih.gov/9383967
https://pubmed.ncbi.nlm.nih.gov/9383967
Publikováno v:
Applied Physics Letters. 98:101106
The enhanced photoluminescence of direct transition is observed on (100), (110), and (111) Ge under biaxial tensile strain. The enhancement is caused by the increase in electron population in the Γ valley. The shrinkage of energy difference between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58d23334a191650b78228990409f028
https://doi.org/10.1063/1.3562589
https://doi.org/10.1063/1.3562589
Autor:
C.-Y. Chen, Yuh-Renn Wu, T.-H. Cheng, Chee-Wee Liu, K.-L. Peng, H.-H. Tseng, C.-Y. Ko, H.-S. Lan
Publikováno v:
Applied Physics Letters. 96:211108
Strong enhancement of Ge direct transition by biaxial-tensile strain was observed. The reduction in band gap difference between the direct and indirect valleys by biaxial tensile strain increases the electron population in the direct valley, and enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e94b56284fc7493cdd2c9d00a194a8
https://doi.org/10.1063/1.3429085
https://doi.org/10.1063/1.3429085
Akademický článek
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