Zobrazeno 1 - 10
of 21
pro vyhledávání: '"H. Rusty Harris"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 2019, but the realization of a meminductor has not yet been conclusively reported. In this paper, the first physical evidence of meminductance is shown i
Externí odkaz:
https://doaj.org/article/6a5f3a31cf6a4eaa90cc446f6372df60
Autor:
Bruno Serfass, Dana Faiez, N. Mirabolfathi, A. Jastram, Bernard Sadoulet, H. Rusty Harris, R. Mahapatra, Kyle Sundqvist
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 855:88-91
Experiments seeking to detect rare event interactions such as dark matter or coherent elastic neutrino nucleus scattering are striving for large mass detectors with very low detection threshold. Using Neganov-Luke phonon amplification effect, the Cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbab263aae7b3502bf988990f97d12ea
https://doi.org/10.1016/j.nima.2017.02.032
https://doi.org/10.1016/j.nima.2017.02.032
Autor:
Gregory H. Huff, Edwin L. Piner, Kyle M. Sundqvist, Feyza Berber, H. Rusty Harris, Derek W. Johnson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:1465-1470
The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9c00e462efc20239583c8d064a3f1c
https://doi.org/10.1109/tmtt.2017.2656865
https://doi.org/10.1109/tmtt.2017.2656865
Publikováno v:
Quantum Information Processing. 17
In this work, we demonstrate the improved data separation capabilities of the Multidimensional Input Quantum Perceptron (MDIQP), a fundamental cell for the construction of more complex Quantum Artificial Neural Networks (QANNs). This is done by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad7e3b64bc1b255a78d7210165cfe3c0
https://doi.org/10.1007/s11128-018-1858-1
https://doi.org/10.1007/s11128-018-1858-1
Autor:
Edwin L. Piner, Rinus T. P. Lee, Paul Kirsch, Gennadi Bersuker, Derek W. Johnson, Man Hoi Wong, Hill Richard J, H. Rusty Harris
Publikováno v:
IEEE Transactions on Electron Devices. 60:3197-3203
We report on the investigation of the charge trapping characteristics of dielectric-gated AlGaN/GaN high electron mobility transistors (HEMTs) with atomic layer deposited HfO2 (Tetrakis-(ethylmethylamino)hafnium and H2O precursors). The impact of pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f35de46cd225d603d7e5dd5dda60e4
https://doi.org/10.1109/ted.2013.2278677
https://doi.org/10.1109/ted.2013.2278677
Autor:
Todd W. Hudnall, Christopher W. Bielawski, John C. Roberts, Wang Wei E, Jung Hwan Yum, Derek W. Johnson, Ryan M. Mushinski, H. Rusty Harris, Sanjay K. Banerjee
Publikováno v:
Journal of Electronic Materials. 43:151-154
The chemical and electrical characteristics of atomic layer deposited (ALD) beryllium oxide (BeO) on GaN were studied via x-ray photoelectron spectroscopy, current–voltage, and capacitance–voltage measurements and compared with those of ALD Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aaf131df58bf2b05ad2b2e3eb3eb846
https://doi.org/10.1007/s11664-013-2754-1
https://doi.org/10.1007/s11664-013-2754-1
Autor:
Patrick S. Lysaght, Husam N. Alshareef, Seung-Chul Song, Chanro Park, Dim-Lee Kwong, Kisik Choi, Gennadi Bersuker, H. Rusty Harris, Hong-bae Park, Huang-Chun Wen, Byoung Hun Lee, Raj Jammy, Prashant Majhi, Hiro Niimi, H. Luan
Publikováno v:
Microelectronic Engineering. 85:2-8
A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dfc7b06696d5749bb858d55f6c4b1b0
https://doi.org/10.1016/j.mee.2007.05.006
https://doi.org/10.1016/j.mee.2007.05.006
Autor:
Paul Kirsch, Scott E. Thompson, Gennadi Bersuker, C. Krug, Rajarao Jammy, Naser Chowdhury, H. Rusty Harris, Siddarth A. Krishnan, Rino Choi, Byoung Hun Lee, Chadwin D. Young, Manuel Quevedo-Lopez, S. Suthram
Publikováno v:
2006 International Electron Devices Meeting.
A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a4b2041ea0ef4fd67cf5b391e74c51
https://doi.org/10.1109/iedm.2006.346758
https://doi.org/10.1109/iedm.2006.346758
Publikováno v:
ECS Meeting Abstracts. :1935-1935
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4edf5f1f85b7bb07f0c6b6c65cd95b6
https://doi.org/10.1149/ma2013-02/25/1935
https://doi.org/10.1149/ma2013-02/25/1935
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 12:033018
The datapath throughput of electron beam lithography systems can be improved by applying lossless image compression to the layout images and using an electron beam writer that contains a decoding circuit packed in single silicon to decode the compres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb851dcd110741b1ec23e666d48c0610
https://doi.org/10.1117/1.jmm.12.3.033018
https://doi.org/10.1117/1.jmm.12.3.033018