Zobrazeno 1 - 10
of 510
pro vyhledávání: '"H. RIECHERT"'
Publikováno v:
Physical Review Research, Vol 5, Iss 3, p 033199 (2023)
We propose a platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely spaced Josephson junctions, through the hybridization of the Andreev states. The Josephson
Externí odkaz:
https://doaj.org/article/be46d516478548a4aa2c791f9f3197f9
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012157-012157-6 (2012)
GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than witho
Externí odkaz:
https://doaj.org/article/217768c25e194d3e8841eec207360e16
Akademický článek
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Akademický článek
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Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc3527b396248e7542ee84835e5c1fe3
Akademický článek
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Publikováno v:
Thin Solid Films. 556:120-124
We demonstrate Fe3Si/Ge/Fe3Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe3Si epitaxial film on GaAs is always sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6750a6664f829d6c1c2f5acb203437c1
https://doi.org/10.1016/j.tsf.2014.01.022
https://doi.org/10.1016/j.tsf.2014.01.022
Autor:
H. Riechert, Handong Sun, Martin D. Dawson, F. Robert, John H. Marsh, P. Gilet, A. Million, A.C. Bryce, L. Grenouillet, Roberto Macaluso, Stephane Calvez
Publikováno v:
Materials Science and Engineering: C. 23:983-987
We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da5e79607004ad1ea826ebea74a8c5f8
https://doi.org/10.1016/j.msec.2003.09.071
https://doi.org/10.1016/j.msec.2003.09.071
Autor:
Wolfgang Braun, André Proessdorf, Miwa Kozu, Masamitu Takahasi, S. Fujikawa, Wen Hu, M. Hanke, P. Rodenbach, H. Riechert, F. Grosse
Publikováno v:
Surface Science. 606:1458-1461
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5962b12f4672f1518601ed6b328515f1
https://doi.org/10.1016/j.susc.2012.05.017
https://doi.org/10.1016/j.susc.2012.05.017
Autor:
P. Drechsel, H. Riechert
Publikováno v:
Journal of Crystal Growth. 315:211-215
We demonstrate the growth of 4.5 μm thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30bfaf44890407a37f3aa123ac238e2e
https://doi.org/10.1016/j.jcrysgro.2010.09.024
https://doi.org/10.1016/j.jcrysgro.2010.09.024