Zobrazeno 1 - 10
of 82
pro vyhledávání: '"H. R. Blank"'
Autor:
V. S. Speriosu, A. Van der Heijden, T.K. Chin, H.-R. Blank, S. Jaren, A.M. Zeltser, K. Pentek, Yanfei Zhang, J. P. Nozières, S. Trotter, T. Tuchscherer
Publikováno v:
IEEE Transactions on Magnetics. 36:586-590
The thermal stability of NiMn-based spin valves was studied both at the coupon level and in full read/write heads. In the coupons, the blocking temperature distribution showed no component below 150/spl deg/C. As a result, the exchange field at eleva
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:1909-1916
Describes an investigation into possible chaotic behavior in a coupled-oscillator system and the possible control of this behavior for communications. The established mathematical models for these oscillator arrays are demonstrated to exhibit chaos w
Publikováno v:
Physical Review B. 58:11676-11684
We have studied the current-voltage characteristics of superconducting weak links in which the coupling medium is the 2-D electron gas in InAs-based semiconductor quantum wells, with relatively large (typically 0.5 micron) separations between niobium
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:894-898
We have investigated hybrid superconductor/semiconductor structures consisting of modulation-doped InAs quantum wells contacted by closely spaced niobium electrodes, and showing induced superconductivity in the InAs. The resistance of these semicondu
Autor:
Michael Heuken, H.-R. Blank, Herbert Kroemer, S Mathis, A. Behres, E. Hall, Venkatesh Narayanamurti, S. Bhargava
Publikováno v:
Journal of Crystal Growth. 187:18-28
We discuss structural and electrical properties of AlAs x Sb 1− x bulk layers and InAs/AlAs x Sb 1− x heterostructures grown by molecular beam epitaxy over a wide range of composition (0⩽ x ⩽0.4). We demonstrate the strong sensitivity of the
Publikováno v:
Journal of Applied Physics. 82:4904-4907
Using an atomic force microscope, we studied various InAs-on-AlSb interface structures grown by molecular beam epitaxy. We found marked differences between the effects of the two interface bond configurations—InSb-like and AlAs-like—on the morpho
Publikováno v:
Journal of Crystal Growth. :894-897
We find that the mobility and morphology of InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy on lattice-mismatched GaAs depends strongly on the composition of the buffer layers. Using atomic force microscopy we show that GaSb buffers prov
Publikováno v:
Physical Review B. 54:R2311-R2314
InAs-AlSb quantum wells contacted with periodic gratings of superconducting Nb electrodes show Josephson-junction characteristics at low temperatures. When a nonzero resistance is reestablished by a weak magnetic field, the resistance shows a strong
Autor:
B. Zapf, M. Frank, H.-R. Blank, R. Kapp, R. Joyce, M. Kaltenhäuser, U. Lossen, R. Sporer, M. Geiger
Publikováno v:
Zeitschrift f�r Physik B Condensed Matter. 97:493-497
Using the111Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb1−xMx (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansat
Autor:
R. Kapp, J.-M. Greneche, M. Ismaier, U. Lossen, B. Zapf, H.-R. Blank, M. Kaltenhäuser, M. Geiger, W. Kreische, M. Leblanc, M. Frank
Publikováno v:
Zeitschrift für Naturforschung A. 49:361-366
The electric field gradient at the fluorine site of several crystalline trifluorides was measured by means of the time differential perturbed angular distribution method. The hyperfine data (vQ and η) are systematically analyzed by taking into accou