Zobrazeno 1 - 10
of 432
pro vyhledávání: '"H. R. Blank"'
Autor:
V. S. Speriosu, A. Van der Heijden, T.K. Chin, H.-R. Blank, S. Jaren, A.M. Zeltser, K. Pentek, Yanfei Zhang, J. P. Nozières, S. Trotter, T. Tuchscherer
Publikováno v:
IEEE Transactions on Magnetics. 36:586-590
The thermal stability of NiMn-based spin valves was studied both at the coupon level and in full read/write heads. In the coupons, the blocking temperature distribution showed no component below 150/spl deg/C. As a result, the exchange field at eleva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63906aad0ab6d0987052e642e3eb4202
https://doi.org/10.1109/20.846222
https://doi.org/10.1109/20.846222
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:1909-1916
Describes an investigation into possible chaotic behavior in a coupled-oscillator system and the possible control of this behavior for communications. The established mathematical models for these oscillator arrays are demonstrated to exhibit chaos w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3bfce9a5a3050ecfee4a52301359032
https://doi.org/10.1109/22.883871
https://doi.org/10.1109/22.883871
Publikováno v:
Physical Review B. 58:11676-11684
We have studied the current-voltage characteristics of superconducting weak links in which the coupling medium is the 2-D electron gas in InAs-based semiconductor quantum wells, with relatively large (typically 0.5 micron) separations between niobium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2366bc04962aadfcefb9dd2f2af0dd71
https://doi.org/10.1103/physrevb.58.11676
https://doi.org/10.1103/physrevb.58.11676
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:894-898
We have investigated hybrid superconductor/semiconductor structures consisting of modulation-doped InAs quantum wells contacted by closely spaced niobium electrodes, and showing induced superconductivity in the InAs. The resistance of these semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3164beea73ecc435828d7189047fac
https://doi.org/10.1016/s1386-9477(98)00182-9
https://doi.org/10.1016/s1386-9477(98)00182-9
Autor:
Michael Heuken, H.-R. Blank, Herbert Kroemer, S Mathis, A. Behres, E. Hall, Venkatesh Narayanamurti, S. Bhargava
Publikováno v:
Journal of Crystal Growth. 187:18-28
We discuss structural and electrical properties of AlAs x Sb 1− x bulk layers and InAs/AlAs x Sb 1− x heterostructures grown by molecular beam epitaxy over a wide range of composition (0⩽ x ⩽0.4). We demonstrate the strong sensitivity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc346416921ac0a96343830c9e90b1e7
https://doi.org/10.1016/s0022-0248(97)00851-8
https://doi.org/10.1016/s0022-0248(97)00851-8
Publikováno v:
Journal of Applied Physics. 82:4904-4907
Using an atomic force microscope, we studied various InAs-on-AlSb interface structures grown by molecular beam epitaxy. We found marked differences between the effects of the two interface bond configurations—InSb-like and AlAs-like—on the morpho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f080438b674366a929e03c5928f5a6b
https://doi.org/10.1063/1.366354
https://doi.org/10.1063/1.366354
Publikováno v:
Journal of Crystal Growth. :894-897
We find that the mobility and morphology of InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy on lattice-mismatched GaAs depends strongly on the composition of the buffer layers. Using atomic force microscopy we show that GaSb buffers prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb6a167528c85089523c727a523c9ad
https://doi.org/10.1016/s0022-0248(96)00920-7
https://doi.org/10.1016/s0022-0248(96)00920-7
Publikováno v:
Physical Review B. 54:R2311-R2314
InAs-AlSb quantum wells contacted with periodic gratings of superconducting Nb electrodes show Josephson-junction characteristics at low temperatures. When a nonzero resistance is reestablished by a weak magnetic field, the resistance shows a strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b4abf3e05ab40cbb143ec8d1a43e296
https://doi.org/10.1103/physrevb.54.r2311
https://doi.org/10.1103/physrevb.54.r2311
Autor:
B. Zapf, M. Frank, H.-R. Blank, R. Kapp, R. Joyce, M. Kaltenhäuser, U. Lossen, R. Sporer, M. Geiger
Publikováno v:
Zeitschrift f�r Physik B Condensed Matter. 97:493-497
Using the111Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb1−xMx (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2a1b64ec7362fa1c9427cfbe4b74d1
https://doi.org/10.1007/bf01322429
https://doi.org/10.1007/bf01322429
Autor:
R. Kapp, J.-M. Greneche, M. Ismaier, U. Lossen, B. Zapf, H.-R. Blank, M. Kaltenhäuser, M. Geiger, W. Kreische, M. Leblanc, M. Frank
Publikováno v:
Zeitschrift für Naturforschung A. 49:361-366
The electric field gradient at the fluorine site of several crystalline trifluorides was measured by means of the time differential perturbed angular distribution method. The hyperfine data (vQ and η) are systematically analyzed by taking into accou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a353d8aa0d5e042b31ced6a0d9a98d1
https://doi.org/10.1515/zna-1994-1-253
https://doi.org/10.1515/zna-1994-1-253