Zobrazeno 1 - 10
of 50
pro vyhledávání: '"H. Röppischer"'
Publikováno v:
Physica Status Solidi (a). 152:171-177
In a commercial MBE system δ-doped silicon layers are prepared followed by epitaxial growth of undoped cap layers. For the characterization of these structures the electrolyte electroreflectance technique is used in connection with successive layer
Publikováno v:
Journal of Applied Physics. 78:4011-4014
We have studied photoreflectance (PR) and reflectance spectra of undoped molecular‐beam‐epitaxy GaAs films on semi‐insulating GaAs substrates at low temperature. In the PR spectra a sharp structure near the band‐gap energy was observed which
Publikováno v:
Journal of The Electrochemical Society. 142:650-655
The properties of the n-Si electrode in both aqueous and organic solution for nonstabilizing conditions were studied by the electroreflectance and capacitance techniques. A shift of the flatband potential in the anodic direction up to 0 V SCE has bee
Publikováno v:
Physica Status Solidi (a). 146:639-652
Extinction of ir radiation at wavelength from 0.9 to 25 μm by thermally oxidized GaAs as well as by GaAs with and without protective layers after heat treatments in various environments is studied. For samples treated in air, two stages correspondin
Publikováno v:
Journal of Applied Physics. 76:4340-4343
Below‐gap structures in photoreflectance spectra of semi‐insulating GaAs were observed originating from electroabsorption of light reflected from the back surface. The peak amplitude of these structures was strongly temperature dependent within t
Autor:
N. Stein, H. Röppischer
Publikováno v:
Physica Status Solidi (a). 123:139-150
The photoluminescence field effect is used to study the recombination at the Si/SiO2 interface. Experiments and theoretical considerations show that the field-induced quenching of the photoluminescence intensity is due to increasing interface recombi
Autor:
H. Röppischer, Rüdiger Goldhahn
Publikováno v:
ResearcherID
For a semiconductor structure consisting of a homogeneously doped layer on a lower-doped substrate of the same material the electroreflectance lineshape at the fundamental absorption edge is studied by model calculations. With the electric field pene
Publikováno v:
Physica Status Solidi (a). 103:161-166
A combined technique of electroreflectance (ER) and Hall measurements for the characterization of thermally converted surface layers is reported. The high sensitivity of the ER spectra to type conversion is demonstrated by ER depth profiling. Success
Autor:
R. Goldhahn, H. Röppischer
Publikováno v:
Zeitschrift für Physikalische Chemie. :985-992
Autor:
H. Röppischer, M. Klopfleisch
Publikováno v:
Physica Status Solidi (a). 20:K21-K24