Zobrazeno 1 - 10
of 37
pro vyhledávání: '"H. Paul Maruska"'
Autor:
Arul Chakkaravarthi Arjunan, E. Kuokstis, Mikhail Gaevski, H. Paul Maruska, Changqing Chen, Vinod Adivarahan, Zheng Gong, Tangali S. Sudarshan, Ying Gao, Jiawei Li, J. W. Yang, M. Asif, Ze Hong Zhang, Maxim S. Shatalov
Publikováno v:
MRS Proceedings. 831
We report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b44f1fc7685455e5b1eba4c99dc04aa
https://doi.org/10.1557/proc-831-e2.9
https://doi.org/10.1557/proc-831-e2.9
Publikováno v:
Applied Physics Letters. 64:1980-1982
We have created thin buried films of low resistivity CoSi2 in silicon by ion implantation, and used them to provide intercell ohmic contacts for monolithically stacked multijunction photovoltaic energy converters. We have grown epitaxial silicon pn j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d881dec533615c61ab5ccbc133bae0b
https://doi.org/10.1063/1.111713
https://doi.org/10.1063/1.111713
Autor:
H. Paul Maruska, Cole W. Litton, M. A. Reshchikov, Feng Yun, T. King, L. He, Daming Huang, Jeff Nause, G. Cantwell, Hadis Morkoç
Publikováno v:
MRS Proceedings. 719
We report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers. Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769ab03caec1e6940233bfc9e3c0b891
https://doi.org/10.1557/proc-719-f8.21
https://doi.org/10.1557/proc-719-f8.21
Publikováno v:
Applied Physics Letters. 63:2661-2663
We report visible light emission from porous structures formed in bulk and thin‐film polycrystalline silicon materials by anodic etching in an HF:ethanol solution. Our results indicate photoluminescence (PL) peaks at wavelengths between 650 and 655
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40512b3940e16ed9d4e5123776809aa3
https://doi.org/10.1063/1.110412
https://doi.org/10.1063/1.110412
Publikováno v:
Applied Physics Letters. 63:45-47
Measurements of the temperature dependence of the current‐voltage characteristics of heterojunction light‐emitting diodes fabricated by depositing indium tin oxide onto the surface of electrochemically etched p‐type silicon (porous silicon) are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed42a7d0e40207015e5c995ea398076
https://doi.org/10.1063/1.109745
https://doi.org/10.1063/1.109745
Publikováno v:
Applied Physics Letters. 61:1338-1340
We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99985a3101e4544f6f14a198ec8d6120
https://doi.org/10.1063/1.108467
https://doi.org/10.1063/1.108467
Publikováno v:
Applied Physics Letters. 60:2514-2516
We report the preparation of silicon‐based visible light‐emitting diodes, configured as heterojunctions between porous silicon (formed by electrochemical etching of p‐type silicon wafers), and n‐type indium tin oxide (ITO). The transparent IT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a26013c1cc94ae12cc7e8a12032ba28
https://doi.org/10.1063/1.106951
https://doi.org/10.1063/1.106951
Autor:
Mike Lioubtchenko, Matthew Schurmant, Qisheng Chen, H. Paul Maruska, Thomas G. Tetreault, Shiro Sakap, Robert Vaudo, Marek Osinskif, Randy J. Shult, Stephen J. Pearton
Publikováno v:
Scopus-Elsevier
With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::940997c2ba96334c5baaeec3c6a4433f
https://doi.org/10.1557/proc-483-333
https://doi.org/10.1557/proc-483-333
Autor:
S. A. Ustin, H. Paul Maruska, Changmo Sung, Jin-Hyo Boo, Wilson Ho, Ig-Hyeon Kim, Peter E. Norris
Publikováno v:
MRS Proceedings. 441
Cubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1381ea91e3007d026c5c01914a845972
https://doi.org/10.1557/proc-441-705
https://doi.org/10.1557/proc-441-705
Autor:
H. Paul Maruska, N. M. Kalkhoran, David C. Morton, Richard T. Tuenge, Themis Parodos, Christopher Wadling, Russell A. Budzilek, Ward D. Halverson
Publikováno v:
SPIE Proceedings.
Ion implantation can introduce color centers into thin film phosphors for electroluminescent (EL) and cathodoluminescent (CL) displays. Color pixel patterns are defined through a simple shadow mask that is translated across the thin film phosphor hos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9df39c6e3c2322bd8670642ce9bb6e96
https://doi.org/10.1117/12.207514
https://doi.org/10.1117/12.207514