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pro vyhledávání: '"H. P. Ng Z. H. Mai"'
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Conventionally, Static Random Access Memory (SRAM) failures rely on memory bitmap for failure analysis. Static fault localization approach is ineffective except if the defect is large enough to cause a resistive short between the VDD and VSS nodes. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf79712e5c3318b4e70efc4dcbc603d5
https://doi.org/10.1109/ipfa.2015.7224389
https://doi.org/10.1109/ipfa.2015.7224389
