Zobrazeno 1 - 10
of 12
pro vyhledávání: '"H. P. Joosten"'
Autor:
Maxine D. Rouvroye, Lotte Oldenburg, Pauline Slottje, Johanna H. K. Joosten, Renee X. de Menezes, Marcel E. Reinders, Gerd Bouma
Publikováno v:
Scandinavian Journal of Primary Health Care, Vol 39, Iss 3, Pp 315-321 (2021)
Background Coeliac disease (CD) has an estimated prevalence of ∼1% in Europe with a significant gap between undiagnosed and diagnosed CD. Active case finding may help to bridge this gap yet the diagnostic yield of such active case finding in genera
Externí odkaz:
https://doaj.org/article/1e29f4d00c5f406692446f2d4c2e1804
Autor:
Esmée Botman, C. Wim Ang, Johanna H. K. Joosten, Pauline Slottje, Johannes C. van der Wouden, Otto R. Maarsingh
Publikováno v:
BMC Family Practice, Vol 19, Iss 1, Pp 1-9 (2018)
Abstract Background Due to the raised public awareness of Lyme Borreliosis (LB), its increased incidence and the increased availability of serological tests, the demand for diagnostic testing on LB has increased. This may affect the diagnostic behavi
Externí odkaz:
https://doaj.org/article/c48cf8107c7145f8a0271dee55810109
Autor:
Mirjam T W van der Sluijs, Dianne P H Schroer-Joosten, Aicha Fid-Fourkour, Mieke P Vrijenhoek, Isolde Debyser, Véronique Moulin, Rob J M Moormann, Abraham J de Smit
Publikováno v:
PLoS ONE, Vol 8, Iss 12, p e81429 (2013)
The Bluetongue virus serotype 8 (BTV-8) strain, which emerged in Europe in 2006, had an unusually high ability to cause foetal infection in pregnant ruminants. Other serotypes of BTV had already been present in Europe for more than a decade, but tran
Externí odkaz:
https://doaj.org/article/e9704cae02ea40e6a4156e3c3b271f8b
Publikováno v:
Journal of Applied Physics. 74:712-717
Along with double barrier resonant tunneling devices becoming high speed engineering devices, there is a need for relatively simple and robust models for the dynamics of these devices. In this study a model for the device dynamics and numerical simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a03306cc36928325f063d1264b9a5b
https://doi.org/10.1063/1.355236
https://doi.org/10.1063/1.355236
Autor:
H. P. Joosten, T.G. van de Roer, Daan Lenstra, J.J.M. Kwaspen, Mohamed Henini, H. J. M. F. Noteborn
Publikováno v:
Physica B: Physics of Condensed Matter, 175(1-3), 301-306. Elsevier
The influence of incoherent tunneling in double-barrier resonant-tunneling (DBRT) diodes, originating in carrier scattering, is investigated using a previously published model in which the device is divided into three regions (accumulation region, ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06002bf7857282b4efda77e1d94c39bf
https://research.tue.nl/en/publications/3b301d3f-6c20-419d-8be2-559599e97793
https://research.tue.nl/en/publications/3b301d3f-6c20-419d-8be2-559599e97793
Publikováno v:
Journal of Physics: Condensed Matter. 3:4249-4256
Applying a magnetic field B to a double-barrier resonant-tunnelling diode, perpendicular to the layer structure, introduces oscillations in current density and capacitance that are periodic in 1/B. A derivation of this periodicity is given, based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31dd0dc7f4dd435de7cf0640a552cc43
https://doi.org/10.1088/0953-8984/3/23/013
https://doi.org/10.1088/0953-8984/3/23/013
Publikováno v:
Thin Solid Films, 184(1-2), 199-206. Elsevier
We present a transparent and simple theory describing coherent transport of charge carriers through a double-barrier resonant tunnelling structure, including charge build-up in a self-consistent way. Numerical analysis of this model gives I–V chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8f6d6092e76480dea614f5ca3e19644
http://www.scopus.com/inward/record.url?scp=0025207853&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=0025207853&partnerID=8YFLogxK
Publikováno v:
Superlattices and Microstructures, 13(2), 153-157. Academic Press Inc.
A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8522ec2e02f51bfe9424df631a9badad
https://research.tue.nl/nl/publications/92594587-22cd-4ef1-b1d9-84551ecc5b12
https://research.tue.nl/nl/publications/92594587-22cd-4ef1-b1d9-84551ecc5b12
Publikováno v:
SPIE Proceedings.
Space charge build-up in the well is shown to be the cause of the inductive effects in double- barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8efd32472ff7447ee556fd8fb5c874e7
https://doi.org/10.1117/12.137631
https://doi.org/10.1117/12.137631
Publikováno v:
Physica B: Physics of Condensed Matter, 175(1-3), 297-300. Elsevier
A recently developed, heuristic model to determine the conditions under which stable biasing of double-barrier resonant-tunneling devices can be achieved, is used to study the effect of the biasing circuit. For an asymmetric GaAs/AlGaAs-based structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8221497ab47e9f34b023771a2539dc7c
https://research.tue.nl/nl/publications/b17b5915-9b31-4bad-bfbe-0d4eb8eba3ba
https://research.tue.nl/nl/publications/b17b5915-9b31-4bad-bfbe-0d4eb8eba3ba