Zobrazeno 1 - 10
of 20
pro vyhledávání: '"H. P. Hjalmarson"'
Autor:
J. Martinsen, G. D. Gilliland, Rama Venkatasubramanian, D. J. Wolford, John F. Klem, H. P. Hjalmarson, S. K. Ghandhi, J. A. Bradley, C. F. Tsang, Thomas F. Kuech
Publikováno v:
Gallium Arsenide and Related Compounds 1991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8030023e0d64433f871bc60cac6f7edb
https://doi.org/10.1201/9781003069638-76
https://doi.org/10.1201/9781003069638-76
Autor:
G. D. Gilliland, G. A. Northrop, Thomas F. Kuech, J. A. Bradley, D. J. Wolford, M. S. Petrovic, Leigh M. Smith, H. P. Hjalmarson
Publikováno v:
Physical Review B. 58:4728-4732
Using a time-resolved photoluminescence imaging technique with high spectral, temporal, and spatial resolution, we have directly measured the time- and carrier-density-dependent heterointerfacial band bending in GaAs/Al{sub x}Ga{sub 1{minus}x}As stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e203c21907d3daf4bcc1cfddabe329b5
https://doi.org/10.1103/physrevb.58.4728
https://doi.org/10.1103/physrevb.58.4728
Autor:
Hosun Lee, M. G. Craford, H. P. Hjalmarson, D.J. Wolford, L. P. Fu, D. G. Chtchekine, J. G. Yu, G. D. Gilliland
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1123-1131
We have examined the photoluminescence and photoluminescence kinetics of a series of In/sub 1-x/Ga/sub x/P alloys in an effort: 1) to elucidate the electronic structure of the conduction band versus alloy composition, especially near the direct-indir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df963fcdaaeb38572bcd6254a78db362
https://doi.org/10.1109/3.594874
https://doi.org/10.1109/3.594874
Publikováno v:
2013 19th IEEE Pulsed Power Conference (PPC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7fa48c8af14a59dd2dc52dfc24940d4
https://doi.org/10.1109/ppc.2013.6627528
https://doi.org/10.1109/ppc.2013.6627528
Autor:
K. W. Carey, Richard P. Schneider, Samuel M. Myers, David M. Follstaedt, J. E. Fouquet, Eric D. Jones, Jeffrey S. Nelson, H. P. Hjalmarson, J. E. Schirber, V. M. Robbins
Publikováno v:
Physical Review B. 53:15893-15901
A number of complementary experimental characterization tools and theoretical band structure methods were used to determine unambiguously the band-edge luminescence as a function of Al concentration, and to place an upper limit on the short-wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db0edbff5a50be5bb8339bf462efd79
https://doi.org/10.1103/physrevb.53.15893
https://doi.org/10.1103/physrevb.53.15893
Autor:
Hosun Lee, K. C. Hsieh, L. P. Fu, M. G. Craford, G. D. Gilliland, Miles V. Klein, David E. Aspnes, J. C. Kim, H. P. Hjalmarson, J. G. Yu
Publikováno v:
Physical Review B. 51:4186-4192
We used room-temperature ellipsometry to study the quasidirect (no-phonon) transitions of disordered ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$P/graded GaP near crossover compositions (0.64\ensuremath{\le}x\ensur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b229489c65b1a61f0546c1f6528baa91
https://doi.org/10.1103/physrevb.51.4186
https://doi.org/10.1103/physrevb.51.4186
Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures
Publikováno v:
Journal of Luminescence. :830-833
We have measured photoluminescence decay kinetics versus temperature for high-quality MOCVD GaAs/Al 0.3 GaAs 0.7 double heterostructures which have been thoroughly characterized at room temperature. The measured lifetime is in good agreement with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a465ebbd176a8310c615f86baeb99470
https://doi.org/10.1016/0022-2313(94)90289-5
https://doi.org/10.1016/0022-2313(94)90289-5
Autor:
G. A. Northrop, J. A. Bradley, D. J. Wolford, H. P. Hjalmarson, G.D. Gililand, J. Klem, Thomas F. Kuech, M. S. Petrovic
Publikováno v:
Acta Physica Polonica A. 84:409-417
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a7e7c63e2a043b2b45e05905d98627
https://doi.org/10.12693/aphyspola.84.409
https://doi.org/10.12693/aphyspola.84.409
Publikováno v:
Physical Review B. 47:15601-15608
We have studied minority-carrier electron and hole transport versus temperature (30--300 K) in a series of undoped, ``interface-free,'' GaAs/${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As double heterostructures prepared by organometallic vapor-phase e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7eb0b7236895560e44ade6c92780a4
https://doi.org/10.1103/physrevb.47.15601
https://doi.org/10.1103/physrevb.47.15601
Autor:
H. P. Hjalmarson, S. R. Kurtz
Publikováno v:
Applied Physics Letters. 69:949-951
To investigate the effects of strain and quantum confinement, Auger rates are calculated for an n‐type strained InAs0.9Sb0.1/In0.87Ga0.13As mid‐infrared laser structure as a function of temperature. Compressive strain in the quantum wells reduces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0717df4576ea8a9088f237112cf2473
https://doi.org/10.1063/1.117091
https://doi.org/10.1063/1.117091