Zobrazeno 1 - 10
of 25
pro vyhledávání: '"H. P. Gillis"'
Publikováno v:
Computational Materials, Chemistry, and Biochemistry: From Bold Initiatives to the Last Mile ISBN: 9783030187774
Ion-enhanced dry etch methods inflict “etch process damage” through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properties necessary for scaling below 10 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76fbf39553a410f9435b3bbbb74c4e3c
https://doi.org/10.1007/978-3-030-18778-1_26
https://doi.org/10.1007/978-3-030-18778-1_26
Publikováno v:
ECS Transactions. 50:33-43
Ion-enhanced dry etch methods inflict "etch process damage" through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properties necessary for scaling below 32 nm. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd256a5a25dd26d5b945039443505b09
https://doi.org/10.1149/05046.0033ecst
https://doi.org/10.1149/05046.0033ecst
Publikováno v:
ECS Transactions. 13:35-46
The conventional ion-enhanced dry etch methods inflict 2 nm or more of "etch process damage" through surface ion bombardment, and this inherent surface damage creates a potentially limiting condition for IC manufacturing at feature sizes below 45 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59f3f840b88d53a825832c8658b5b9ec
https://doi.org/10.1149/1.3035365
https://doi.org/10.1149/1.3035365
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:1600-1605
Evolution of surface morphologies of GaAs, GaP, InP, GaN, and SiO2 during dry etching is studied. Etching was carried out in Cl2/H2/Ar plasmas with electron enhancement. No structural damage was introduced during etching. Etched surface morphologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6111014432108a64cb6dbcec1cb92b5c
https://doi.org/10.1116/1.1752896
https://doi.org/10.1116/1.1752896
Autor:
J. B. Varesi, Jaehwa Kim, David R. Rhiger, Takaaki Koga, H. P. Gillis, Gerald A. Garwood, Scott M. Johnson, Mark S. Goorsky
Publikováno v:
Journal of Electronic Materials. 32:677-685
Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3b55cc9f4c70cee059cf50832621b2
https://doi.org/10.1007/s11664-003-0052-z
https://doi.org/10.1007/s11664-003-0052-z
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:834-839
Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a036c3e1cd5d6d4cd3a8c4270f8c18
https://doi.org/10.1557/s1092578300003495
https://doi.org/10.1557/s1092578300003495
Autor:
Kevin P. Martin, D. A. Choutov, H. P. Gillis, Jon T. Moore, Kenneth Douglas, Thomas A. Winningham
Publikováno v:
Surface Science. 406:221-228
A precisely ordered and precisely located array of 5 nm diameter nanoclusters has been fabricated by first etching into the substrate an array of holes with diameters comparable with the size of nanoclusters sought and then depositing adatoms on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9948a385b0ca5d374ba363940b526fe9
https://doi.org/10.1016/s0039-6028(98)00115-0
https://doi.org/10.1016/s0039-6028(98)00115-0
Autor:
Dietmar Pum, Jon T. Moore, Thomas A. Winningham, Jacques Pankovc, Paul D. Beale, Stefan Weigert, Dmitri A Choutov, Hagan Bayley, Margit Sára, Kenneth Douglas, Noel A. Clark, Seta Küpcü, Andreas Breitwieser, Uwe B. Sleytr, Frank M. Unger, Samuel Levy, Bernhard Schuster, Christoph Mader, Paul Messner, Ivar Frithsen, H. P. Gillis, Kevin P. Martin, B. Jahn-Schmid
Publikováno v:
FEMS Microbiology Reviews. 20:151-175
The wealth of information existing on the general principle of S-layers has revealed a broad application potential. The most relevant features exploited in applied S-layer research are: (i) pores passing through S-layers show identical size and morph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f309774459708a5fc5bb0046087419
https://doi.org/10.1111/j.1574-6976.1997.tb00306.x
https://doi.org/10.1111/j.1574-6976.1997.tb00306.x
Publikováno v:
Journal of Electronic Materials. 26:301-305
Hetero-epitaxial films of GaN(OOOl), deposited on SiC(OOOl) by organometallic vapor phase epitaxy and masked by 200 nm of SiO2, have been patterned by low energy electron enhanced etching (LE4) in hydrogen and chlorine dc plasmas at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190bc7b2fb5c1138d8ef1604bfdcac6f
https://doi.org/10.1007/s11664-997-0168-7
https://doi.org/10.1007/s11664-997-0168-7
Publikováno v:
JOM. 48:50-55
Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c2df04521b27f1a1fc8bf48f4cc0d9
https://doi.org/10.1007/bf03223028
https://doi.org/10.1007/bf03223028