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pro vyhledávání: '"H. P. Dietrich"'
Akademický článek
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Autor:
Peter Vettiger, Otto Voegeli, P. Wolf, H.K. Seitz, E.C. Cahoon, Melvin K. Benedict, A. Moser, P. Buchmann, K. Datwyler, H. P. Dietrich, Gian-Luca Bona, David J. Webb
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1319-1331
A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::158a6674d7d60e4a1d3a4ec2d6df611d
https://doi.org/10.1109/3.89949
https://doi.org/10.1109/3.89949
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320d437256fe6812b5c2c7ec6e038e86
https://doi.org/10.1109/leosst.1991.639007
https://doi.org/10.1109/leosst.1991.639007
Autor:
Otto Voegeli, Gian-Luca Bona, Peter Vettiger, Michael Moser, H. P. Dietrich, David J. Webb, Peter Buchmann, Melvin K. Benedict, G. Sasso, K. Daetwyler
Publikováno v:
SPIE Proceedings.
The fabrication of etched mirrors for AlGaAs semiconductor lasers is described. The coating techniques for the passivation and reflectivity modification of the etched mirror surfaces are presented. Measurements on coated lasers show excellent beam qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcf7192fa32d52084f39b95d8eed7412
https://doi.org/10.1117/12.43808
https://doi.org/10.1117/12.43808
Autor:
D. J. Webb, M. K. Benedict, G. L. Bona, P. Buchman, N. Cahoon, K. Dätwyler, H. P. Dietrich, A. Moser, G. Sasso, H. K. Seitz, P. Vettiger, O. Voegeli, P. Wolf
Publikováno v:
AIP Conference Proceedings.
Full-wafer fabrication of AlGaAs lasers, which have mirrors etched by chemically assisted ion-beam etching and passivated by ion-beam sputtered AI2O3, is described. Full-wafer testing techniques for both laser parameters (P-1, far-field, spectrum, TO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7cec59f6953ac6c57a77e223b1d6217
https://doi.org/10.1063/1.40640
https://doi.org/10.1063/1.40640
Autor:
K. Daetwyler, N. Cahoon, P. Wolf, H.K. Seitz, Otto Voegeli, David J. Webb, Gian-Luca Bona, H. P. Dietrich, A. Moser, Peter Vettiger, P. Buchmann, M.E. Benedict
Publikováno v:
12th IEEE International Conference on Semiconductor Laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f994f7bd66bf4778dfcc073fe11a286
https://doi.org/10.1109/islc.1990.764464
https://doi.org/10.1109/islc.1990.764464
Publikováno v:
Organometallics; Dec2009, Vol. 28 Issue 23, p6739-6749, 11p
Publikováno v:
Organometallics; Feb2009, Vol. 28 Issue 4, p1173-1179, 7p
Autor:
G. L. Bona, N. Cahoon, Melvin K. Benedict, G. Sasso, K. Datwyler, Otto Voegeli, A. Moser, Peter Vettiger, P. Wolf, H.K. Seitz, P. Buchmann, H. P. Dietrich, David J. Webb
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2886
A new approach for large‐scale semiconductor laser fabrication is presented. In this ‘‘full‐wafer processing and testing’’ concept, the mirrors are fabricated, not by cleaving the wafer but by forming them by means of a chemically assiste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88e64e8529e467606c86e8562344d30
https://doi.org/10.1116/1.585619
https://doi.org/10.1116/1.585619
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:1844-1848
We report an ion‐beam subtractive etch process for patterning the Pb‐alloy counter electrode of superconducting Josephson tunnel junction devices. There is no resist on the wafer during the critical steps of cleaning and oxidizing the Nb base ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54420946f40480d7b3470d6165a0102
https://doi.org/10.1116/1.573389
https://doi.org/10.1116/1.573389