Zobrazeno 1 - 10
of 29
pro vyhledávání: '"H. P. D. Schenk"'
Autor:
T. Remmele, H. P. Strunk, H. P. D. Schenk, M I Heggie, Pierre Gibart, J. Elsner, T Frauenheim, M Albrecht, A. T. Blumenau
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351a4b23b9a73e6cac26b13f076fe183
https://doi.org/10.1201/9781351074629-68
https://doi.org/10.1201/9781351074629-68
Autor:
H. P. D. Schenk, Philippe Vennéguès, B.S. Diaby, L. Bodiou, Hyonju Kim-Chauveau, Robert W. Martin, Eric Frayssinet, Ian Watson
Publikováno v:
Journal of Crystal Growth. 353:108-114
Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (In x Al 1− x )N films whatever the layer thickness and the InN content. V-pits a
Publikováno v:
Journal of Crystal Growth. 314:85-91
We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium
Autor:
A. Schön, H. P. D. Schenk, A. Berezin, Alois Krost, E. Cheifetz, Shmuel I. Borenstain, Armin Dadgar
Publikováno v:
Journal of Crystal Growth. 311:3984-3988
A comparative study of cathodoluminescence ultraviolet photon yields and decay times of large area GaN and zinc oxide (ZnO) layers grown for scintillator applications by metalorganic vapor phase epitaxy is presented. Silicon-doped GaN and non-intenti
Autor:
Pawel Prystawko, Tadeusz Suski, Henryk Teisseyre, Szymon Grzanka, H. P. D. Schenk, M. Krysko, Przemyslaw Wisniewski, Grzegorz Targowski, G. Franssen, Robert Czernecki, K. Krowicki, P. Perlin, Michał Leszczyński, Jan Muszalski
Publikováno v:
physica status solidi (c). 1:1537-1548
Series of ten-, twenty-, and thirty-period (Al,Ga)N-based distributed Bragg reflectors (DBR) have been grown by low-pressure metalorganic vapour phase epitaxy on bulk GaN substrates. Respective mirror target wavelength reflectances of 54, 72, and 86%
Publikováno v:
Journal of Crystal Growth. 258:232-250
At present, a major part of commercially available group III nitride optoelectronic devices is grown on sapphire substrates by metalorganic vapour phase epitaxy. Besides classical techniques involving selective overgrowth of patterned substrates, GaN
Autor:
S. Dalmasso, M. Vaille, Bernard Beaumont, Pierre Gibart, H. P. D. Schenk, Mathieu Leroux, P. de Mierry, J.-M. Bethoux, Eric Feltin
Publikováno v:
physica status solidi (a). 192:335-340
A RCLED structure, composed of InGaN multi-quantum wells inserted in a 3λ GaN based micro-cavity, was grown by metalorganic vapor phase epitaxy. The bottom mirror was a GaN/AIGaN distributed Bragg reflector (DBR). The growth process was followed by
Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy
Autor:
Fernando Calle, P. de Mierry, Bernard Beaumont, Pierre Gibart, Eric Feltin, M. Vaille, M. Laügt, O. Tottereau, H. P. D. Schenk, Philippe Vennéguès, Susana Fernández
Publikováno v:
physica status solidi (a). 188:899-903
A series of selective (Al,Ga)N quarter-wave reflectors has been grown on sapphire and silicon substrates by metalorganic vapor phase epitaxy. The microstructure of the mirror structures, consisting of GaN quarter-wave layers alternating with AlN, AlG
Publikováno v:
Materials Science and Engineering: B. 82:163-166
Silicon-doped InxGa1 − xN films (0.01x0.03) have been grown by metalorganic vapour phase epitaxy on sapphire substrates. The evolution of the photoluminescence (PL) lineshape has been studied as a function of temperature and electron concentration
Autor:
Tadeusz Suski, Axel Svane, Agata Kaminska, H. P. D. Schenk, G. Staszczak, N. E. Christensen, I. Gorczyca
Publikováno v:
physica status solidi (a). 207:1369-1371
Electronic band structure calculations of InAlN and InGaN under pressure are presented for two different arrangements of the In atoms, uniform and clustered. The band gap pressure coefficients exhibit strong bowing, and the effect is especially large