Zobrazeno 1 - 10
of 55
pro vyhledávání: '"H. Pötzl"'
Autor:
G. Hoffmann, D. Holzmann, F. Jäger, K. Riedling, G. H. Schwuttke, K. A. Pandelisev, R. C. White, H. Holzmann, W. Kausel, G. Nanz, S. Selberherr, H. Pötzl, H. Leopold, R. Röhrer, G. Winkler, M. Thurner, K. Seiner, W. Tritremmel, G. Walther, Erwin Schoitsch, S. Hertl, G. Schaffar, K. Schmidt, H. Steinbrecher, F. Voggenberger, W. Windischhofer, R. Turba, J. Grabner, H. Aberl, F. Seifert, F. Buschbeck, K. Wallisch, Ch. Eichtinger, P. Wach, W. Bittinger, A. Kainz, M. Jestl, W. Beinstingl, K. Berthold, A. Köck, E. Gornik, G. Kloiber, F. Kreid, K. P. Schröcker, M. Schrödl, E. Brazda, G. Niedrist, K. Dietz, P. Fey, S. Frenkenberger, M. Furtner, B. Dejneka, A. Goiser, M. Sust, M. Kowatsch, Ch. Jorde, G. G. Thallinger, E. Mothwurf, E. Schubert, J. Steger, E. Trzeba, I. Awramow, R. Pucher, L. M. Auer, S. Schuy, H. Schima, L. Huber, A. Prodinger, H. Schmallegger, H. Thoma, H. Stöhr, W. Mayr, R. Steiner, O. Wiedenbauer, G. List, G. Wießpeiner, Th. Petsch, G. Doblhoff, D. Kirchner, O. Koudelka, A. Gierlinger, A. Ullrich, B. Braune, H. Horvat, U. Mayer, A. Gauby, A. Richter, K. R. Spie
Im Tagungsband zur Informationstagung'Mikroelektronik 87'werden die in Form von Kurzvorträgen und Posters dargebotenen Beiträge in übersichtlicher Form präsentiert und geben einen guten Überblick über den aktuellen Forschungs- und Wissensstand
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 11:403-411
The effect of a screening oxide layer on 1‐D and 2‐D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile broadening by oxide layers are explained by the fact that atoms at latti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6456ca58a62cf1c41c6baacd33a621b9
https://doi.org/10.1108/eb010101
https://doi.org/10.1108/eb010101
Publikováno v:
Journal of Applied Physics. 69:8133-8138
The transient diffusion behavior of boron during rapid thermal annealing is simulated by adapting a recently developed pair diffusion model. Boron is assumed to reside on interstitial sites after ion implantation, forming boron‐interstitial pairs (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e73a25a7e04404c2839ccc1329d976d
https://doi.org/10.1063/1.347466
https://doi.org/10.1063/1.347466
Autor:
Gerhard Stingeder, R. Schork, Jurgen Lorenz, Leopold Palmetshofer, G. Hobler, S. Gara, H. Pötzl, C. Tian
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 10:323-330
A three‐parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amor‐phous silicon and from channeling implantations into and silicon. Simulated boron profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::458e87c42a66b8103612bdbf13840844
https://doi.org/10.1108/eb051709
https://doi.org/10.1108/eb051709
Publikováno v:
Materials Science Forum. :719-724
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5c3ef9207c31f11b93c6ca8d2a19cf
https://doi.org/10.4028/www.scientific.net/msf.38-41.719
https://doi.org/10.4028/www.scientific.net/msf.38-41.719
Publikováno v:
Journal of The Electrochemical Society. 137:3931-3934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fb1918b343a8c9c33f9f393087f367
https://doi.org/10.1149/1.2086331
https://doi.org/10.1149/1.2086331
Publikováno v:
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8519c971c6084580dd1f091ed6d9c2
https://doi.org/10.1109/nupad.1990.748253
https://doi.org/10.1109/nupad.1990.748253
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
Realistic two-dimensional as-implanted boron distributions in crystalline silicon are presented. The results are reliable in a concentration range extending to four orders of magnitude below the peak concentration. The dependence of lateral channelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2b4f2ad6ed237fda25d9cb679b9c8d
https://doi.org/10.1109/iedm.1991.235328
https://doi.org/10.1109/iedm.1991.235328
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
In ULSI device processing technology, internal gettering (IG) of metallic contaminants is an important issue. The structure of IG wafers consists of the bulk microdefect region and a defect-free subsurface region, termed as “denuded zone” (DZ). I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2269345dd56cbb9758c7b486161f9f24
https://doi.org/10.1007/978-3-7091-6657-4_35
https://doi.org/10.1007/978-3-7091-6657-4_35
Publikováno v:
Scopus-Elsevier
Concentration profiles of channeling and random implants of boron, phosphorus, and arsenic in silicon are compiled from the literature and are analyzed using Monte Carlo simulations. An empirical 3-parameter model of the electronic stopping power is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f6d6fbab3e00a8a70bc3f4aeb487300
https://doi.org/10.1557/proc-279-165
https://doi.org/10.1557/proc-279-165