Zobrazeno 1 - 10
of 426
pro vyhledávání: '"H. Okushi"'
Autor:
Y. Doi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, H. Morishita, T. Tashima, S. Miwa, S. Yamasaki, P. Neumann, J. Wrachtrup, Y. Suzuki, N. Mizuochi
Publikováno v:
Physical Review X, Vol 4, Iss 1, p 011057 (2014)
Apart from applications in classical information-processing devices, the electrical control of atomic defects in solids at room temperature will have a tremendous impact on quantum devices that are based on such defects. In this study, we demonstrate
Externí odkaz:
https://doaj.org/article/71cfa7f5434f48b7ad072da7b682b12c
Autor:
S. Yamasaki, Satoshi Koizumi, T. Makino, D. Takeuchi, Masahiko Ogura, Hiromitsu Kato, D. Kuwabara, H. Ohashi, H. Kawashima, H. Okushi
Publikováno v:
2015 3rd International Conference on Electric Power Equipment – Switching Technology (ICEPE-ST).
We have reported on ultra-high-voltage vacuum switches using diamond pin diode-type electron emitters with negative electron affinity. Based on the previous 10-kV demonstration, we present our recent progress on high-current operations at 4 A/cm2 in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd6368e528c8e1f22e1bfa3a3de7aace
https://doi.org/10.1109/icepe-st.2015.7368370
https://doi.org/10.1109/icepe-st.2015.7368370
Autor:
H. Okushi, H. Ohashi, Satoshi Koizumi, D. Kuwabara, Hiromitsu Kato, H. Kawashima, T. Makino, Masahiko Ogura, S. Yamasaki, D. Takeuchi
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We have been proposed ultra-high voltage vacuum switches using diamond pin diode-type electron emitters with a negative electron affinity. Based on the previous 10 kV demonstration, our recent progress on high current operations above 1 A/cm2 in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94293eacfaf086643deb6f9f050a7e7a
https://doi.org/10.1109/ispsd.2015.7123423
https://doi.org/10.1109/ispsd.2015.7123423
Publikováno v:
Journal of Applied Physics. 91:4585-4589
A comparison of topographical and electrical properties of hydrogenated and oxidized high-quality B-doped homoepitaxial films was carried out by conductive atomic force microscopy. The topography images of both hydrogenated and oxidized films showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965c3929f33dddace46dc2a546fd605f
https://doi.org/10.1063/1.1456250
https://doi.org/10.1063/1.1456250
Autor:
H. Ohashi, D. Takeuchi, T. Makino, Satoshi Koizumi, Masahiko Ogura, Hiromitsu Kato, S. Yamasaki, H. Okushi
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper summarizes our recent achievement on a 10kV vacuum switch with negative electron affinity (NEA) of diamond PIN electron emitters (PIN-emitters), a model for such vacuum switch with PIN-emitters, and a recent progress on reduction of operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c7e4cea0b62f6415fb9fe7a53f3dd05
https://doi.org/10.1109/ispsd.2014.6856014
https://doi.org/10.1109/ispsd.2014.6856014
Autor:
S. Imai, Junji Senzaki, H. Okushi, Naoto Kobayashi, Yasunori Tanaka, Hisao Tanoue, Kazuo Arai, Kenji Fukuda
Publikováno v:
Applied Surface Science. :544-549
High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm−2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a821f936cf394ef59bc48f43243dec79
https://doi.org/10.1016/s0169-4332(00)00093-3
https://doi.org/10.1016/s0169-4332(00)00093-3
Autor:
Han Woong Yeom, Charles S. Fadley, S. Hara, Bongjin Simon Mun, Kensuke Tono, Shozo Kono, T. Ohta, J. Kitamura, Iwao Matsuda, Masatsugu Shimomura, K. Kajimura, Sadafumi Yoshida, W. A. R. Huff, H. Okushi
Publikováno v:
Physical Review Letters. 83:1640-1643
The atomic structure of the c(2[times]2) reconstruction of the C -terminated 3C-SiC(001) surface was unambiguously determined by scanning tunneling microscopy and surface-core-level-resolved photoelectron diffraction studies. This surface is found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2cfde6008036b29010ed8e815f9ae7
https://doi.org/10.1103/physrevlett.83.1640
https://doi.org/10.1103/physrevlett.83.1640
Publikováno v:
Surface Science. :465-469
The formation of Si-rich surfaces on the 3C–SiC(001) crystal using Si molecular beam epitaxy has been investigated using scanning tunneling microscopy. We observed a surface phase transition from the c(4×2) reconstruction to the (3×2) reconstruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637585b0047b12102819fcffdc6d1132
https://doi.org/10.1016/s0039-6028(99)00530-0
https://doi.org/10.1016/s0039-6028(99)00530-0
Publikováno v:
Applied Physics A: Materials Science & Processing. 68:663-666
A novel method of determination of polycrystalline diamond films’ thermoconductive properties using the photoacoustic effect is proposed. By this method, we studied the diamond films grown on silicon substrates using chemical vapor deposition techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be434439c2f98f41e582da7aa0281a9
https://doi.org/10.1007/s003390050957
https://doi.org/10.1007/s003390050957