Zobrazeno 1 - 10
of 51
pro vyhledávání: '"H. Ochimizu"'
Publikováno v:
Physica B: Condensed Matter. 184:327-331
The frequency dependence of the magnetoresistance of kish graphite was measured up to 10 MHz using phase-sensitive detection techniques under pulsed high magnetic fields. Large changes of both amplitude and phase of the magnetoresistance were found a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcbdd5da4aa004c84366b29cef490c81
https://doi.org/10.1016/0921-4526(93)90375-g
https://doi.org/10.1016/0921-4526(93)90375-g
Publikováno v:
Measurement Science and Technology. 3:662-666
A simple method of constructing a multilayer wire-wound pulse magnet was developed by using ice with woven-glass cloth as a reinforcement spacer. Employing strong copper-wire embedded with Nb-Ti filaments, magnetic fields up to 58 T were generated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::594ac73017e48073970e09653554ebd7
https://doi.org/10.1088/0957-0233/3/7/006
https://doi.org/10.1088/0957-0233/3/7/006
Publikováno v:
Physica B: Condensed Matter. 177:505-510
We have measured the magneto-resistance in single crystal graphite in pulsed high magnetic fields up to 52 T at low temperatures. When the magnetic field was applied parallel to the c -axis, many new features were found in the high field phase after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693b7635946bce2bb257e278df91f9c5
https://doi.org/10.1016/0921-4526(92)90158-o
https://doi.org/10.1016/0921-4526(92)90158-o
Publikováno v:
IEEE Transactions on Magnetics. 28:489-492
A simple and easy way of constructing a multilayer wire-wound pulse magnet was devised. A strong pulse magnet was easily constructed by simply employing ice with woven-glass cloth as a reinforcement spacer between the layers. Magnetic fields over 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96868d64845e4d0e907478318c94a33d
https://doi.org/10.1109/20.119918
https://doi.org/10.1109/20.119918
Autor:
Hiroshi Kudo, Yanai Kenichi, Nobuyuki Ohtsuka, Toshiro Futatsugi, Hideya Matsuyama, Atsuhiro Tsukune, Masaki Haneda, Michie Sunayama, T. Tabira, Noriyoshi Shimizu, H. Ochimizu
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
The semi-global level is rather different from the intermediate level in terms of wiring scale and types of interlayer dielectrics, which has an impact on the encapsulation capability of MnO. The difference in both levels, therefore, requires major c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9383c45ea901b1a2b8003e3300f1dee
https://doi.org/10.1109/iitc.2009.5090384
https://doi.org/10.1109/iitc.2009.5090384
Autor:
Yoshiyuki Ohkura, Shunichi Fukuyama, Masafumi Nakaishi, H. Ochimizu, Tamotsu Owada, Tomoji Nakamura, Tsunehisa Sakoda, Yasuo Nara, Atsuhiro Tsukune, N. Asami, Hiroshi Kudo, Masataka Kase, N. Ohara, Hirofumi Watatani, T. Kouno
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
As a practical curing technique of low-k material for 32-nm BEOL technology node, we demonstrated that electron beam (e-beam) irradiation was effective to improve film properties of nano-clustering silica (NCS). We confirmed that by using optimized e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f962dc5b0ef441c26d0f4d8067727c2
https://doi.org/10.1109/iitc.2009.5090368
https://doi.org/10.1109/iitc.2009.5090368
Autor:
Atsuhiro Tsukune, Nobuyuki Ohtsuka, S. Amari, Masaki Haneda, Toshiro Futatsugi, Tamotsu Owada, H. Ochimizu, Hirofumi Watatani, Michie Sunayama, Hiroshi Kudo, Tomoji Nakamura, Toshihiro Sugii, Hideya Matsuyama, Toshihide Suzuki, T. Tabira, Hideki Kitada, Noriyoshi Shimizu
Publikováno v:
2008 International Interconnect Technology Conference.
To further enhance electro-migration resistance, we applied a self-aligned barrier technique to Cu wiring encapsulated with a MnO barrier. This combination of the self-aligned barrier and encapsulation techniques increased maximum current density to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5aaf863a1fb5e67ff96c2c65d6eca0
https://doi.org/10.1109/iitc.2008.4546942
https://doi.org/10.1109/iitc.2008.4546942
Autor:
T. Miyashita, K. Ikeda, Y. S. Kim, T. Yamamoto, Y. Sambonsugi, H. Ochimizu, T. Sakoda, M. Okuno, H. Minakata, H. Ohta, Y. Hayami, K. Ookoshi, Y. Shimamune, M. Fukuda, A. Hatada, K. Okabe, T. Kubo, M. Tajima, E. Motoh, T. Owada, M. Nakamura, H. Kudo, T. Sawada, J. Nagayama, A. Satoh, T. Mori, A. Hasegawa, H. Kurata, K. Sukegawa, A. Tsukune, S. Yamaguchi, M. Kase, T. Futatsugi, S. Satoh, T. Sugii
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We present an aggressively-scaled high-performance and low-power bulk CMOS platform technology aiming at large-scale (multi-core) high-end use with 45-nm ground rule. By utilizing a high-epsilon offset spacer and FET specific multiple-stressors with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94a4a6d73edad87e81ccea5e1deeaad
https://doi.org/10.1109/iedm.2007.4418915
https://doi.org/10.1109/iedm.2007.4418915
Publikováno v:
AIP Conference Proceedings.
Spatially indirect optical transitions have been studied in ZnSe/BeTe/ZnSe quantum well (QW) structures with a type‐II band alignment by means of electric field dependent photoluminescence (PL) measurements. In asymmetric QW structures, which have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26643700c449a31b38f1789433eaeb49
https://doi.org/10.1063/1.2729959
https://doi.org/10.1063/1.2729959
Autor:
H. Kudo, H. Ochimizu, A. Tsukune, S. Okano, K. Naitou, M. Sakamoto, S. Takesako, T. Shirasu, A. Asneil, N. Idani, K. Sugimoto, S. Ozaki, Y. Nakata, T. Owada, H. Watatani, N. Ohara, N. Ohtsuka, M. Sunayama, H. Sakai, M. Oryoji, S. Akiyama, H. Iwata, H. Yamamoto, Y. Shimoda, T. Yao, S. Suda, T. Suzuki, S. Sakai, H. Kitada, S. Amari, T. Tabira, A. Matsuura, Y. Iba, Y. Mizushima, H. Matsuyama, Y. Suzuki, N. Shimizu, K. Yanai, M. Nakaishi, T. Futatsugi, I. Hanyu, T. Nakamura, T. Sugii
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc515f4282a614208a6ef70fe371167
https://doi.org/10.1109/iitc.2007.382383
https://doi.org/10.1109/iitc.2007.382383