Zobrazeno 1 - 10
of 55
pro vyhledávání: '"H. O. Blom"'
Publikováno v:
Handbook of Thin Film Process Technology ISBN: 9781351072786
Manually operated coating processes are becoming quite rare in modern material fabrication. Sputtering is an example of a widely used industrial thin film coating process. This chapter outlines a simple model for the basic reactive sputtering process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30ebd6528ddcc574ce58273294322ba
https://doi.org/10.1201/9781351072786-5
https://doi.org/10.1201/9781351072786-5
Autor:
G.R. Thomas, Robert Stevens, Karen Aplin, L. Wang, Barry J. Kent, I. M. Loader, S.E. Huq, A. Malik, H. O. Blom
A silicon field emitter neutralizer is under development at the Rutherford Appleton Laboratory for the LISA Pathfinder mission [B.J. Kent, Class Quantum Grav. 22, S483 (2005)]. A summary of this project from the fabrication point of view is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c181fd97ee44d47676fea4b51ef8e1
https://ora.ox.ac.uk/objects/uuid:68bcf321-9391-4704-82ce-0c37ab0ce789
https://ora.ox.ac.uk/objects/uuid:68bcf321-9391-4704-82ce-0c37ab0ce789
Autor:
A. Almansa, Stefan Kolb, M. Zielony, V. Djakov, B. Schmidt, Ivo W. Rangelow, B. E. Volland, D. Dontzov, J. Mielczarski, N. Nikolov, M. Zier, K. Ivanova, S. E. Huq, Tzv. Ivanov, H. O. Blom, T. Sulzbach, R. Pedreau, P. Zawierucha, Ivan Kostic, O. Fortagne, Piotr Grabiec, Du P. Latimier, Wolfgang Engl, Y. Sarov, Teodor Gotszalk, Klaus Edinger, Arun Persaud
Publikováno v:
Microelectronic Engineering 84(2007)5-8, 1260-1264
A major limitation for future nanotechnology, particularly for bottom-up manufacturing is the non-availability of 2-dimensional massively parallel probe arrays. Scanning proximity probes are uniquely powerful tools for analysis, manipulation and bott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11d4adad557ff863c4aa892809b11849
https://doi.org/10.1016/j.mee.2007.01.219
https://doi.org/10.1016/j.mee.2007.01.219
Autor:
S.-L. Zhang, Mikael Östling, Wei-Min Li, M. von Haartman, E. Vainonen-Ahlgren, Per-Erik Hellström, A.-C. Lindgren, Jörgen Olsson, Eva Tois, G. Sjoblom, S Persson, Johan Seger, H.-O. Blom, Dongping Wu, Marko Tuominen
Publikováno v:
IEEE Electron Device Letters. 24:171-173
Proof-of-concept pMOSFETs with a strained-Si/sub 0.7/Ge/sub 0.3/ surface-channel deposited by selective epitaxy and a TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack grown by atomic layer chemical vapor deposition (ALD) techniques wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15134027c48a74994df268c8dcb144a7
https://doi.org/10.1109/led.2003.809524
https://doi.org/10.1109/led.2003.809524
Autor:
A. M. Barklund, H.‐O. Blom
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1212-1216
The decreasing dimensions and increasing complexity of very large scale integrated circuits will also result in a more complex topography. There will be an increasing demand for simulation programs in order to accurately predict the topography during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f5fa4130a6eeb1200f2fc826e78307
https://doi.org/10.1116/1.578229
https://doi.org/10.1116/1.578229
Autor:
I. M. Loader, G.R. Thomas, H. O. Blom, Robert Stevens, B. J. Kent, A. Malik, S.E. Huq, C.M. Collingwood, L. Wang, Karen Aplin
Publikováno v:
Scopus-Elsevier
This paper describes the development of coatings for silicon field emission arrays used as an electron source to maintain spacecraft charge neutrality. The neutraliser specification includes 6 mA emission current at 0.2 W/mA and the instrument is req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16f6697da6a4cf532131654ef5c06c5b
https://doi.org/10.1109/ivnc.2004.1354949
https://doi.org/10.1109/ivnc.2004.1354949
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:497-499
By reactive sputtering of Ti in a gas mixture of Ar/SiH4 it is possible to form TiSi2. The influence of rf bias to the target on film composition is investigated. The dependence of partial pressure of SiH4 on film composition TiSix is also demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2828a77d9171a3962b2bebe1f52c02f8
https://doi.org/10.1116/1.571914
https://doi.org/10.1116/1.571914
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