Výsledky vyhledávání

The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon

Autor: Randi Holmestad, John C. Walmsley, H. Nordmark, Arve Holt, Alexander Ulyashin

Publikováno v: Solid State Phenomena. :315-320

Hydrogenated n and p doped Czochralski Si substrates have been studied by means of atomic force microscopy, scanning and transmission electron microscopy, Raman spectroscopy and microwave photoconductivity decay techniques. The measurements show that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b34521d01ee34f2c84d4fbe6da2e8cef
https://doi.org/10.4028/www.scientific.net/ssp.131-133.315

Zobrazit plný text záznamu

A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon

Autor: Randi Holmestad, H. Nordmark, Alexander Ulyashin, John C. Walmsley

Publikováno v: Solid State Phenomena. :309-314

Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used to compare hydrogen defects formed in p doped [001] oriented Cz silicon samples which are H+ plasma treated , H+ implanted or Si+ implanted + H+ plasma treat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7bea5b8d62d487e46adb69471ebb8e43
https://doi.org/10.4028/www.scientific.net/ssp.131-133.309

Zobrazit plný text záznamu

Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon

Autor: Bård Tøtdal, John C. Walmsley, Alexander Ulyashin, Randi Holmestad, H. Nordmark

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:176-181

Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n- and p-doped Czochralski silicon samples were annealed at te

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b54615d3caa6e5766864c34340c7c2b
https://doi.org/10.1016/j.nimb.2006.10.043

Zobrazit plný text záznamu

Post-β″ phases and their influence on microstructure and hardness in 6xxx Al-Mg-Si alloys

Autor: H. Nordmark, Randi Holmestad, Calin Daniel Marioara, S. J. Andersen

Publikováno v: Journal of Materials Science. 41:471-478

Starting from solid solution (T4) or a condition with β″ precipitates (T6), three Al-Mg-Si alloys with similar total solute content (1.3 at%), but different Si/Mg ratios (2, 1.25 and 0.8) were isothermally heat-treated at 250 or 260°C and investi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b6e88460dbd26ede06154c812de3d33
https://doi.org/10.1007/s10853-005-2470-1

Zobrazit plný text záznamu

Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock

Autor: Eivind Øvrelid, H. Nordmark, Simona Binetti, M. Di Sabatino, Randi Holmestad, John C. Walmsley, Maurizio Acciarri, Joris Libal

Nowadays the photovoltaic (PV) market suffers the severe shortage of silicon. One possible solution is to produce SoG-Si via a direct metallurgical route, followed by a final casting step. The use of such lower quality materials in solar cell product

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01b2ba0343e6740cdb42acd1f6973459
http://hdl.handle.net/10281/5780

Zobrazit plný text záznamu

H-initiated extended defects from plasma treatment: Comparison between c-Si and mc-Si

Autor: Randi Holmestad, Alexander Ulyashin, H. Nordmark, John C. Walmsley

Publikováno v: Journal of Physics: Conference Series. 281:012029

In this study n- and p-type polished Czochralski-grown Si (Cz-Si) and p-type polished and as-cut multi-crystalline (mc) Si wafers have been directly H plasma treated in a plasma enhanced chemical vapour system in order to study H subsurface defect fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c02965964e22ec72b8879b7e56d95186
https://doi.org/10.1088/1742-6596/281/1/012029

Zobrazit plný text záznamu

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

Autor: N. Matsumoto, Alexander Ulyashin, Suzuka Nishimura, John C. Walmsley, Hiroshi Nagayoshi, H. Nordmark, Randi Holmestad, Kazutaka Terashima, C. D. Marioara

Publikováno v: Journal of Applied Physics. 105:043507

Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to microm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b8a5f18a9d59d04b0c8f7811daa2ea7
https://doi.org/10.1063/1.3078080

Zobrazit plný text záznamu

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Autor: H. Nordmark, Randi Holmestad, John C. Walmsley, Alexander Ulyashin

Publikováno v: Journal of Applied Physics. 105:033506

Hydrogenation of multicrystalline silicon for solar cell applications is considered to be an effective method of increasing the lifetime by passivating defects and impurities. Hydrogen plasma treated as-cut and chemically etched multicrystalline sili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c1b5c64baae87d97158cc0fcaa485c5
https://doi.org/10.1063/1.3073893

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Vyhledávací nástroje:

Upřesnit hledání