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pro vyhledávání: '"H. Narisawe"'
Autor:
H. Itoh, C. Fukumoto, H. Narisawe, Kazuhiro Bessho, M. Motoyoshi, Hiroshi Kano, H. Mori, K. Moriyama
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
This work is a report on high-performance MRAM technology. 0.4/spl times/0.8 /spl mu/m/sup 2/ MTJ elements were successfully integrated with 0.35 /spl mu/m CMOS technology without process-induced damage. A magnetoresistance (MR) ratio of more than 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3617d1a9c8f6ed3bd4e5f0e3b6f36a1e
https://doi.org/10.1109/vlsit.2002.1015457
https://doi.org/10.1109/vlsit.2002.1015457
