Zobrazeno 1 - 10
of 1 191
pro vyhledávání: '"H. Naganuma"'
Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
Publikováno v:
AIP Advances, Vol 14, Iss 2, Pp 025018-025018-5 (2024)
We investigate the switching dynamics of a 75°-canted Spin–orbit torque (SOT) device with an in-plane easy axis using the micro-magnetic simulation. The switching time (τ) is evaluated from the time evolution of the magnetization. The device with
Externí odkaz:
https://doaj.org/article/5738427e6c004dd78b39f77ddd5229b8
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 035133-035133-5 (2022)
Dynamic magnetic properties of Ta-O/Co20Fe60B20 bilayer films are strongly influenced by the oxidation condition of the Ta-O layer. The oxidation of the Ta-O layer by a slight amount of oxygen with a pressure (POxygen) of 0.03 Pa decreases in-plane d
Externí odkaz:
https://doaj.org/article/c283e4561eb94ad58ab02c4a8c62265e
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025231-025231-5 (2021)
Magnetic coupling between two CoFeB layers through the W insertion layer is important in the conventional double CoFeB/MgO interface, magnetic tunneling junctions (MTJs) (double-MTJs) with MgO/CoFeB/W/CoFeB/MgO free layer stack because it increases t
Externí odkaz:
https://doaj.org/article/eb9ad07a83b8417b968f252dd0b545ec
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025211-025211-5 (2021)
We investigated the effects of surface modification treatment (SMT) on the perpendicular magnetic anisotropy (PMA) and the thermal tolerance of top-pinned magnetic tunnel junctions (MTJs) with a Co/Pt synthetic ferrimagnetic coupling reference layer.
Externí odkaz:
https://doaj.org/article/f51224c1978d4b9b9ac92086c975c30a
Autor:
H. Naganuma, T. Ichinose, H. A. Begum, S. Sato, X. F. Han, T. Miyazaki, In-T. Bae, M. Oogane, Y. Ando
Publikováno v:
AIP Advances, Vol 4, Iss 8, Pp 087133-087133-10 (2014)
BiFeO3 (BFO) and LaxSryMnzO3 (LSMO) films were epitaxially grown on SrTiO3 (100) substrates by r.f. magnetron sputtering with various oxygen gas flow ratios (FO2). Compositional ratios of each atom in both of BFO and LSMO could be controlled kept to
Externí odkaz:
https://doaj.org/article/54da1693f53242549c35f396d7a5678d
Publikováno v:
IEEE Transactions on Magnetics. 58:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3da91e3c25da49ca135ce087505102bc
https://doi.org/10.1109/tmag.2022.3151562
https://doi.org/10.1109/tmag.2022.3151562
Autor:
H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4fd2d8b988ab8c9cc1cdc2997fd779
https://doi.org/10.1109/iedm45625.2022.10019412
https://doi.org/10.1109/iedm45625.2022.10019412
Akademický článek
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Publikováno v:
Japanese Journal of Applied Physics. 62:SC0804
Magnetic tunnel junctions (MTJ) with MgO/Fe based interfaces and perpendicular spin directions form the basis of present-day spin-transfer torque magnetic random-access memories. Many semiconductor devices, such as CMOS transistors, have undergone fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d231ecd9d18cdf7351b8e044c90b2952
https://doi.org/10.35848/1347-4065/acb062
https://doi.org/10.35848/1347-4065/acb062
Akademický článek
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