Zobrazeno 1 - 10
of 200
pro vyhledávání: '"H. Moriceau"'
Autor:
H. Moriceau, Carole Braley, Frédéric Mazen, Chrystel Deguet, François Rieutord, Aurélie Tauzin
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 277:84-92
The Smart Cut™ process technology was originally developed to manufacture silicon on insulator wafers (SOI). The process is based on ion implantation (hydrogen, helium, argon, etc.) and wafer bonding and allows single crystal layers transferred ont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acffd874e0afc8639b6961aa0a01944
https://doi.org/10.1016/j.nimb.2011.12.050
https://doi.org/10.1016/j.nimb.2011.12.050
Autor:
François Rieutord, Caroline Ventosa, H. Moriceau, Christophe Morales, Laure Libralesso, Frank Fournel
Publikováno v:
ECS Transactions. 16:361-368
Direct silicon or silicon dioxide wafer bonding appears as a more and more attractive way to build up stacking structures in micro-technologies. For this, high bond strengths and void-free bonding interfaces are required. Although Si-Si hydrophilic b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604ea4618137f742d8f73adb47573ae3
https://doi.org/10.1149/1.2982888
https://doi.org/10.1149/1.2982888
Autor:
Laure Libralesso, François Rieutord, Frank Fournel, Caroline Ventosa, Yannick Le Tiec, H. Moriceau, Thomas Signamarcheix
Publikováno v:
ECS Transactions. 16:475-488
CEA-INAC, 17, rue des Martyrs 38054 GRENOBLE - France Low temperature wafer bonding is requested in many applications. Most of them involve silicon or silicon dioxide bonding interfaces. Studying bonding process / mechanism in the low temperature ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::948292e4f14b1da3a7777bbd6c5080f2
https://doi.org/10.1149/1.2982902
https://doi.org/10.1149/1.2982902
Publikováno v:
ECS Transactions. 3:239-248
Comparisons of various plasma assisted low temperature wafer bonding procedures have been conducted in order to carry out reliable void-free and high bonding strength. In this way, reactive ion etching (RIE), microwaves (MW) and inductive coupled pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a6dbaf2a7d217583067faf9e789c104
https://doi.org/10.1149/1.2357074
https://doi.org/10.1149/1.2357074
Publikováno v:
ECS Transactions. 3:139-146
For both hydrophilic and hydrophobic surface preparation, using the combination of advanced surface treatment and tuned annealing process, void free Si/Si direct bonding have been successfully obtained. The pre-bonding procedure involves only low tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2b9259f3bfca9a12c19e4ae79260a60
https://doi.org/10.1149/1.2357063
https://doi.org/10.1149/1.2357063
Publikováno v:
ECS Transactions. 3:79-90
Direct wafer bonding is a generic technology enabling the fabrication of innovative structures. Adequate surface treatments allow bonding of virgin as well as partially or fully processed wafers, leading to new Anti-sticking BSOI, Patterned BSOI and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f979163e649545fd252e7d6baa325ae
https://doi.org/10.1149/1.2357057
https://doi.org/10.1149/1.2357057
Autor:
Christophe Morales, François Rieutord, Luciana Capello, H. Moriceau, Rémi Beneyton, Anne-Marie Charvet
Publikováno v:
ECS Transactions. 3:205-215
Wafer bonding can be viewed as an example of rough surface adhesion. We show that formalisms developed to describe rough surface adhesion can be rescaled to nanometer range and applied to silicon wafer bonding, with results that fit well with experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c7ffc44b1834827d7b58a764731c60
https://doi.org/10.1149/1.2357071
https://doi.org/10.1149/1.2357071
Publikováno v:
Applied Surface Science. :668-672
A sample, composed of inverted boron deltas/SiO2/boron deltas/silicon on an insulator substrate (SOI), was analyzed using a Cameca IMS 5f and a Cameca IMS Wf, with 500 eV O2+, oxygen flooding, and an electron gun. To synthesize this “double delta d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c194147992f28ae66e73ffd6347263c4
https://doi.org/10.1016/j.apsusc.2004.03.143
https://doi.org/10.1016/j.apsusc.2004.03.143
Autor:
O. Kononchuk, B.-Y. Nguyen, H. Moriceau, F. Fournel, F. Rieutord, S. Cristoloveanu, S. Ghosh, D. Burnett, F. Andrieu, J.P. Colinge, B. Cheng, A. Brown, E. Towie, N. Daval, K.K. Bourdelle, A. Asenov, S. Markov, A.S.M. Zain, M.G. Khazhinsky, J.-P. Raskin, M. Emam, N. Sugii, C.S. Tan, W. Bogaerts, S.K. Selvaraja, K. Mori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15b6bade8db64e99201e24743ba05f8
https://doi.org/10.1016/b978-0-85709-526-8.50017-3
https://doi.org/10.1016/b978-0-85709-526-8.50017-3
Autor:
A.M. Papon, Gérard Benassayag, Alain Claverie, T. Barge, B. Aspar, A. J. Auberton-Herve, T. Poumeyrol, M. Bruel, H. Moriceau, C. Maleville
Publikováno v:
Microelectronic Engineering. 36:233-240
The Smart-Cut process used to produce SOI wafers is based on proton implantation and wafer bonding. In this paper, the behavior of the cavities induced by hydrogen implantation in silicon is studied. The effect of a bonded stiffener on the splitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7e0537087607c67cc973e9a9a70cf07
https://doi.org/10.1016/s0167-9317(97)00055-5
https://doi.org/10.1016/s0167-9317(97)00055-5