Zobrazeno 1 - 10
of 27
pro vyhledávání: '"H. M. Przewlocki"'
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055203-055203-9 (2018)
We report on the advantages of using Graphene-Insulator-Semiconductor (GIS) instead of Metal-Insulator-Semiconductor (MIS) structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface a
Externí odkaz:
https://doaj.org/article/1ab32cd3344c4341b6d239f9e506b57b
Publikováno v:
Journal of Telecommunications and Information Technology. 2:86-90
In this paper, we present the results of research focusing on methods for recognition/classification of audio signals. We consider the results of the research project to serve as a basis for the main module of a hybrid expert system currently under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f864962b32230202309f7575a6ddfe94
https://doi.org/10.26636/jtit.2020.143220
https://doi.org/10.26636/jtit.2020.143220
Publikováno v:
MIXDES
The fundamental property of any semiconductor device is its energy band diagram, which allows prediction of parameters and limitations of the device. The commonly used and most effective methods of band diagram determination are based on photoelectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5b4b5a4d7702e0bdc5c9d69fd2c0bf
https://doi.org/10.23919/mixdes.2018.8436596
https://doi.org/10.23919/mixdes.2018.8436596
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:M60-M63
Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C-SiC and 4H-SiC were compared. The difference in trap energy distributions between the polytypes confirme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a78f059705077d5d5222ad290a7997e
https://doi.org/10.1149/2.0101509jss
https://doi.org/10.1149/2.0101509jss
Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
The energy band diagram is a primary feature of any semiconductor device and determines its physical parameters and practical applicability. The most effective technique of band diagram characterization is the photoelectric measurement based on inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a8a1e3f5931cd7c4f9bab1be91bea8
https://doi.org/10.1109/icmts.2017.7954260
https://doi.org/10.1109/icmts.2017.7954260
Publikováno v:
ECS Transactions. 58:61-70
The 3C-SiC silicon carbide is a promising substrate material for MOS transistors. Parameters of MOS transistors are strongly dependent on the processing of the semiconductor-dielectric system. We study and compare the crucial features of the SiC(3C)-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe39e18d725d62a4485c66ae0e7288e2
https://doi.org/10.1149/05804.0061ecst
https://doi.org/10.1149/05804.0061ecst
Publikováno v:
ECS Transactions. 50:231-242
Cubic silicon carbide (3C-SiC) is a promising material for medium and high power field effect transistors, due to higher than in other SiC polytypes inversion layer mobility [1]. The purpose of this work was to characterize a series of gate-SiO2-SiC(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4deaede5aa91ea3da5d89d1a0d5c13ea
https://doi.org/10.1149/05003.0231ecst
https://doi.org/10.1149/05003.0231ecst
Publikováno v:
Open Physics, Vol 11, Iss 2, Pp 231-238 (2013)
In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference ϕMS, the barrier height at the gate-dielectric interface E BG and the flat-band in semiconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16d67032322762d4600c64448b32c72d
https://doaj.org/article/93036e56c1c848bf89564a762d874253
https://doaj.org/article/93036e56c1c848bf89564a762d874253
Autor:
K. Król, Jerzy Żuk, H. M. Przewlocki, Piotr Kościelniak, Monika Kwoka, Tomasz Gutt, Marcin Turek, Marek Guziewicz, Mariusz Sochacki, Paweł Borowicz, Jan Szmidt, Jacek Szuber
Publikováno v:
Materials Science Forum. :733-736
In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e833100a648f9de7c7da3edcea02bea6
https://doi.org/10.4028/www.scientific.net/msf.740-742.733
https://doi.org/10.4028/www.scientific.net/msf.740-742.733
Autor:
H. M. Przewlocki, Ivona Z. Mitrovic, Gediminas Simutis, Vinod R. Dhanak, Naser Sedghi, Krzysztof Piskorski, Steve Hall
Publikováno v:
Thin Solid Films. 520:6959-6962
This paper presents experimental evidence on effective work function tuning due to the presence of oxygen at the TiNx/LaLuO 3 interface. Two complementary techniques, internal photoemission and X-ray photoelectron spectroscopy, show good agreement on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90fabb7d778f6b8885b276b9fe5f3017
https://doi.org/10.1016/j.tsf.2012.07.082
https://doi.org/10.1016/j.tsf.2012.07.082