Zobrazeno 1 - 10 of 50 pro vyhledávání: '"H. M. Manasevit"'
1
10 GHz surface impedance measurements of (Y,Er)BaCuO films produced by MOCVD, laser ablation, and sputtering
Autor: A. Kain, M. K. Wagner, K.P. Daly, Abby C. Lee, R. Hu, J. Luine, Rentschler Simon, H. M. Manasevit, C.L. Pettiette-Hall, D. St. John
Publikováno v: IEEE Transactions on Magnetics. 27:1528-1531
A parallel-plate resonator technique previously used to measure microwave surface resistance R/sub s/(T) has been extended to measure absolute penetration depth lambda (T). Measurements of both quantities near 10 GHz from 4.2 K to T/sub c/ are report
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c53d9b82734de488013d6544ee47a36c
https://doi.org/10.1109/20.133474
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2
High-T/sub c/ superconducting microstrip resonators and filters on LaAlO/sub 3
Autor: K. P. Daly, C. Petite-Hall, Charles M. Jackson, H. M. Manasevit, Abby C. Lee, J. H. Takemoto, J.F. Burch, D.C. St. John, R. Hu
Publikováno v: Proceedings of the 45th Annual Symposium on Frequency Control 1991.
The authors discuss recent developments in high-Q microstrip resonators and filters using various deposition processes. They successfully developed sputtering, metalorganic vapor deposition (MOCVD), and laser deposition processes that produces high-q
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7e6d8ca408bb448378c4386161ece99
https://doi.org/10.1109/freq.1991.145938
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3
Microstrip resonators using two‐sided metalorganic chemical vapor deposited Er‐Ba‐Cu‐O thin films
Autor: J. F. Burch, Rentschler Simon, K.P. Daly, H. M. Manasevit, J. H. Takemoto, Charles M. Jackson, D. C. Saint John
Publikováno v: Applied Physics Letters. 58:1109-1111
We have measured very low microwave losses in microstrip resonators produced in a newly developed process which deposits high‐temperature Er‐Ba‐Cu‐O superconducting films by metalorganic chemical vapor deposition on both sides of a LaAlO3 sub
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::583d81c8432384b0b2f05dcb728fca53
https://doi.org/10.1063/1.104387
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5
Progress Towards a YBCO Circuit Process
Autor: R. Hu, H. M. Manasevit, M. J. Zani, J.F. Burch, C. E. Platt, Rentschler Simon, S.M. Schwarzbek, K.P. Daly, J. Luine, D.C. St. John, W. D. Dozier, M.S. Wire, A.E. Lee
Publikováno v: Science and Technology of Thin Film Superconductors 2 ISBN: 9781468413472
We report on progress in several key areas necessary for the establishment of a circuit process for high-temperature superconductive electronics (HTSE). These include superconductor films, compatible dielectric layers, metallic contacts, and Josephso
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c6b5553adc402c687956db2bbae85ee
https://doi.org/10.1007/978-1-4684-1345-8_82
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6
An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium
Autor: H. M. Manasevit, T. S. Low, G. E. Stillman, B. J. Skromme, K. L. Hess, P. D. Dapkus
Publikováno v: Journal of Electronic Materials. 11:1115-1137
An analytical study of the impurities in trimethylgallium (TMGa) and subsequent correlation of the effect of these impurities on resulting GaAs films grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of using fractiona
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb369867be18d1dbde60eea916de05d8
https://doi.org/10.1007/bf02658919
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7
Si on Cubic Zirconia
Autor: L. A. Moudy, I. Golecki, J. E. Mee, H. M. Manasevit, Jianhua Yang
Publikováno v: Journal of The Electrochemical Society. 130:1752-1758
Croissance epitaxique de couches monocristallines de Si sur les faces (100), (110) et (111) de monocristaux de zircone stabilises par l'oxyde d'yttrium. Croissance des couches de Si par pyrolyse de SiH 4 entre 950-1075°C a des vitesses de 0,08-1,2
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab79f54361b5b5946d8830597a79abaa
https://doi.org/10.1149/1.2120076
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10
High purity GaAs prepared from trimethylgallium and arsine
Autor: T.S. Low, G. E. Stillman, H. M. Manasevit, K. L. Hess, P. D. Dapkus
Publikováno v: Journal of Crystal Growth. 55:10-23
A study of the sources and control of residual impurities in GaAs grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of source purity, growth temperature, and reactor pressure upon residual impurities incorporation are
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8e7f0084ceb551cb4f687527230f7df
https://doi.org/10.1016/0022-0248(81)90265-7
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