Výsledky vyhledávání - "H. M. Şağban"

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Autor: Rasit Turan, Mustafa Karaman, Salar Habibpur Sedani, Ö. Tüzün Özmen, H. M. Şağban

WOS: 000485256900018 Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96353f777674b0f43f4389ce540ff642
https://hdl.handle.net/20.500.12684/4577

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Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

Autor: İlke Taşçıoğlu, E. Yağlıoğlu, Ö. Tüzün Özmen, H. M. Şağban, Ş. Altındal

Taşçıoğlu, İlke (Arel Author)
In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca75fe6fe8794faa05b9807dae85873c
https://hdl.handle.net/20.500.12684/6014

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