Zobrazeno 1 - 10
of 89
pro vyhledávání: '"H. Münder"'
Autor:
Ruediger Arens-Fischer, H. Münder, M. G. Berger, C. Pietryga, M Ebert, Wolfgang Richter, U. Frotscher, U. Rossow
Publikováno v:
Thin Solid Films. 276:36-39
In this paper we investigate the oxidation of porous silicon by O3, H2O2, and, for comparison, in normal air. Such an oxidation may serve as passivation for porous silicon in applications in order to prevent devices from degradation. The changes in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723db6aaef9e5a5cd8df1bba23bda8e0
https://doi.org/10.1016/0040-6090(95)08044-9
https://doi.org/10.1016/0040-6090(95)08044-9
Autor:
Ruediger Arens-Fischer, H. Münder, Manja Krüger, Hans Lüth, S. Hilbrich, Markus Thönissen, M. G. Berger, Wolfgang Theiss
Publikováno v:
Thin Solid Films. 276:257-260
Application of porous silicon in device structures requires the formation of micron-size porous areas. Therefore, selective area anodization on photolithographically patterned p-doped substrates was investigated. As shown in this work, porosity and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af809dd23f436b72d7d4401976513177
https://doi.org/10.1016/0040-6090(95)08066-x
https://doi.org/10.1016/0040-6090(95)08066-x
Publikováno v:
Electrochimica Acta. 40:1435-1438
Porous Silicon as regular nanostructured material is used for an electrochemical preparation of different binary and ternary nanostructured compound systems. The nanostructured films are analysed by means of XPS and sputter depth profiling.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e2cba27055a4b4284eaead8d8b38442
https://doi.org/10.1016/0013-4686(95)00046-h
https://doi.org/10.1016/0013-4686(95)00046-h
Publikováno v:
Journal of The Electrochemical Society. 142:615-620
Porous silicon formed by anodization of a p-type silicon substrate is characterized by a distribution of crystallites with diameters smaller than about 100 A. The corresponding size distributions obtained from Raman measurements show distinct peaks w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98cb3a0ddf2064719176d1277e6f76da
https://doi.org/10.1149/1.2044110
https://doi.org/10.1149/1.2044110
Publikováno v:
Thin Solid Films. 255:59-62
Porosity superlattices (SLs) are a new type of Si-based heterostructures which exhibit a periodical variation of the porosity in depth. These structures have been investigated by transmission electron microscopy. Different formation techniques for po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a898cd8e8770c7a0fb997b545d689f6f
https://doi.org/10.1016/0040-6090(94)05604-c
https://doi.org/10.1016/0040-6090(94)05604-c
Autor:
R. Arens-Fischer, H. Münder, Hans Lüth, Michael Berger, Markus Thönissen, M. Arntzen, W. Theiβ
Publikováno v:
Thin Solid Films. 255:313-316
We have investigated the optical properties of porosity superlattices and complex multilayer systems. Type II superlattices reveal a more complex layer structure than expected from the substrate doping levels. Type I layer systems have been used to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81353b8b6216f1769d1596bfa13a67d2
https://doi.org/10.1016/0040-6090(94)05617-m
https://doi.org/10.1016/0040-6090(94)05617-m
Autor:
U. Frotscher, H. Münder, Wolfgang Richter, M. G. Berger, Markus Thönissen, St. Frohnhoff, U. Rossow
Publikováno v:
Thin Solid Films. 255:5-8
The influence of various parameters of the electrochemical process on the resulting microstructure of porous silicon layers was studied by spectroscopic ellipsometry. The first parameter, the etching time, is known to determine the layer thickness. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3704fed31e826405c770c44b8ee01b
https://doi.org/10.1016/0040-6090(94)05676-5
https://doi.org/10.1016/0040-6090(94)05676-5
Publikováno v:
Thin Solid Films. 255:163-166
We have studied the correlation between the visible photoluminescence (PL) efficiency and the nature and concentration of point defects by Raman spectroscopy, PL spectroscopy and electron paramagnetic resonance (EPR) spectroscopy in as-prepared, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e79d935456e843a8a72ad11806ef84
https://doi.org/10.1016/0040-6090(94)05645-t
https://doi.org/10.1016/0040-6090(94)05645-t
Publikováno v:
Thin Solid Films. 255:317-320
Polybithiophene (PBT) can be deposited anodically within the pores of porous silicon (PS) from an organic electrolyte under mild conditions. Three different stages of the polymerization are observed: (i) silicon oxidation and PBT nucleation, (ii) gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26840c4d4559dfa82136f68eca649c1
https://doi.org/10.1016/0040-6090(94)05618-n
https://doi.org/10.1016/0040-6090(94)05618-n
Publikováno v:
Thin Solid Films. 255:63-66
The electroless and cathodic electrodeposition of metals (Au, Cu, Ni) into porous silicon (PS) is studied. The electrochemically modified PS layers are analysed by X-ray photoelectron spectroscopy and sputter depth profiling. The electroless depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0f7c54787f4060c04d8ba4a30661d2b
https://doi.org/10.1016/0040-6090(94)05605-d
https://doi.org/10.1016/0040-6090(94)05605-d