Zobrazeno 1 - 10
of 40
pro vyhledávání: '"H. Lautenschlager"'
Publikováno v:
Progress in Photovoltaics: Research and Applications. 16:159-170
Crystalline silicon thin-film (cSiTF) solar cells are an attractive alternative to bulk silicon solar cells. At Fraunhofer ISE we follow the concept of the epitaxial wafer equivalent (EpiWE), where 20 µm of silicon are deposited epitaxially by high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6598207e14ca83633b64303acf192ae8
https://doi.org/10.1002/pip.783
https://doi.org/10.1002/pip.783
Publikováno v:
Progress in Photovoltaics: Research and Applications. 9:41-47
The formation of pn junctions and surface passivation by rapid thermal processing is being proved as a new and competitive method for silicon solar cell production. As the main process mechanisms are enhanced, the total process time at high temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2416ff8ef593dbce55bef47b0fbe54a
https://doi.org/10.1002/pip.353
https://doi.org/10.1002/pip.353
Publikováno v:
Solar Energy Materials and Solar Cells. 65:495-501
Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1 min, due to enhanced diffusion and oxidation mechanisms. Contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f335e6e4014a849f9ac8584f2b208a
https://doi.org/10.1016/s0927-0248(00)00132-x
https://doi.org/10.1016/s0927-0248(00)00132-x
Publikováno v:
Solid State Phenomena. :415-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e1ea044eb4f4bf1eae5fd09b5721f5
https://doi.org/10.4028/www.scientific.net/ssp.37-38.415
https://doi.org/10.4028/www.scientific.net/ssp.37-38.415
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
All work published so far on C-SiTF on ceramics was based on either non-conductive ceramics, or on "model" ceramics never able to cope with the cost requirements. For a wafer equivalent approach, where c-Si films on substrate can be directly processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f90bc29e0037b00f343a0ecbad46f1
https://doi.org/10.1109/wcpec.2006.279714
https://doi.org/10.1109/wcpec.2006.279714
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
This paper suggests epitaxy of silicon for emitter formation by high temperature CVD as an alternative to conventional processing for standard silicon wafer solar cells. Epitaxy could provide an alternative method to create an adjustable emitter shap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd86cff48b1a8eaf8d1993db76413bd9
https://doi.org/10.1109/wcpec.2006.279355
https://doi.org/10.1109/wcpec.2006.279355
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
In this paper, the authors investigate the simultaneous processing of the emitter junction and the emitter surface passivation by rapid thermal annealing (RTA) from a doped spin-on glass (SOG). Test structures and solar cells of different emitter pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96143c460d04c4a79eb6b46f5c6940aa
https://doi.org/10.1109/wcpec.1994.520504
https://doi.org/10.1109/wcpec.1994.520504
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
In a study we applied different solar cell processes of varying complexity to several different directionally solidified mc-Si materials. The materials differed with respect to the crystallization velocity, planarity of the crystallization interface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908b9f1d39e3924ea4406b552b7124e0
https://doi.org/10.1109/pvsc.1997.653913
https://doi.org/10.1109/pvsc.1997.653913
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Simultaneous diffusion of phosphorus and aluminum by rapid thermal processing (RTP) in the order of one minute is used to realize emitter and back surface field in a single high temperature step, with controlled surface concentration of the dopant in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c55e11747e3c4a56d33174d59b109c
https://doi.org/10.1109/pvsc.2000.915832
https://doi.org/10.1109/pvsc.2000.915832
Autor:
S. Peters, Stephan Riepe, Christophe Ballif, H. Lautenschlager, W. Warta, R. Schindler, Joerg Isenberg, J. Dicker
Publikováno v:
Scopus-Elsevier
Lifetime mappings are common tools for assessing the quality of mc-silicon for solar cell production. Nevertheless it is a difficult problem to directly relate lifetime mappings to overall solar cell parameters. This paper intends to show that this c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea4b827560daacdb13dbe954de15419
https://doi.org/10.1109/pvsc.2002.1190490
https://doi.org/10.1109/pvsc.2002.1190490