Zobrazeno 1 - 10
of 10
pro vyhledávání: '"H. L. M. Chang"'
Autor:
H. L. M. Chang, T. J. Zhang, Jianchang Guo, D. J. Lam, S.-K. Chan, R. P. Chiarello, C. M. Foster
Publikováno v:
Journal of Applied Physics. 73:7823-7830
We report optical waveguiding in single‐crystal, epitaxial (101) oriented rutile (TiO2) thin films grown on (1120) sapphire (α‐Al2O3) substrates using the metal‐organic chemical vapor deposition technique. The electromagnetic field distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae27e8fc7ede71111855becdd638425c
https://doi.org/10.1063/1.353931
https://doi.org/10.1063/1.353931
Publikováno v:
Physical Review B. 47:12900-12907
We studied the finite-size effect on the first-order metal-insulator phase transition and the accompanying tetragonal-to-monoclinic structural transition of ${\mathrm{VO}}_{2}$ films. The ${\mathrm{VO}}_{2}$ films were epitaxially grown by a metal-or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f427a9fd9b532a29c19f3c179acdeb7
https://doi.org/10.1103/physrevb.47.12900
https://doi.org/10.1103/physrevb.47.12900
Autor:
H. You, H. Frase, R. P. Chiarello, C. M. Foster, D. J. Lam, H. L. M. Chang, J.C. Parker, T. J. Zhang
Publikováno v:
Journal of Applied Physics. 73:2841-2847
Epitaxial thin films of TiO2 and VO2 single layers and TiO2/VO2 multilayers were grown on (1120) sapphire (α‐Al2O3) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four‐circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60bbb0a486e3b7e5a26c8c666b4d804f
https://doi.org/10.1063/1.353036
https://doi.org/10.1063/1.353036
Autor:
D.J. Lam, T. J. Zhang, H. You, Y. Gao, H. L. M. Chang, C.M. Foster, Ronald P. Chiarello, Jianchang Guo
Publikováno v:
Journal of Materials Research. 7:2495-2506
Titanium dioxide thin films were grown on sapphire (11$\overline 1$0) substrates in a low-pressure metal-organic chemical vapor deposition system at temperatures ranging from 400 to 800 °C. Raman scattering, x-ray diffraction, transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840f53b82c97d6172542dcbf1375f4dd
https://doi.org/10.1557/jmr.1992.2495
https://doi.org/10.1557/jmr.1992.2495
Publikováno v:
Journal of Materials Research. 6:2417-2426
TiO2 rutile thin films grown on (110) sapphire (α−Al2O3) by the MOCVD technique have been characterized by transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). The TiO2 rutile thin films grew on the sapphire with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5a40d02ee0f7f4ae3c0c31b0ed2ca2
https://doi.org/10.1557/jmr.1991.2417
https://doi.org/10.1557/jmr.1991.2417
Publikováno v:
Applied Physics Letters. 64:1777-1779
Single‐crystal yttrium aluminum garnet (Y3Al5O12 or YAG) thin films have been grown on (111) Gd3Ga5O12 substrate by metalorganic chemical vapor deposition. X‐ray diffraction, selective‐area electron diffraction, and transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6306fee5d2a37b58fd69c422a341f05b
https://doi.org/10.1063/1.111805
https://doi.org/10.1063/1.111805
Publikováno v:
Applied Physics Letters. 62:1754-1756
Single‐crystal PbZrO3 thin films have been grown on (001) SrTiO3 substrates by metalorganic chemical vapor deposition. The single‐crystal nature of c‐axis oriented PbZrO3 film is confirmed by x‐ray diffraction, selective area electron diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28dc806b8c7491f1f42541b0518d4115
https://doi.org/10.1063/1.109596
https://doi.org/10.1063/1.109596
Publikováno v:
Applied Physics Letters. 61:408-410
Ferroelectric PbTiO3 thin films have been prepared by a low‐pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c296e52ca4c71ed4e2e453641d3935d
https://doi.org/10.1063/1.107897
https://doi.org/10.1063/1.107897
Publikováno v:
Applied Physics Letters. 61:3116-3117
Sapphire (0001) basal plane is a commonly used substrate for film depositions. Due to the threefold rotational symmetry of the (0001) substrate surface, epitaxial films deposited are expected to form at most three variants with relative orientations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e381bfc9b40c661ac0b97803e0d27c1a
https://doi.org/10.1063/1.107978
https://doi.org/10.1063/1.107978
Publikováno v:
Applied Physics Letters. 65:790-790
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6007c4e79e93981abe4ca3c079fc75c6
https://doi.org/10.1063/1.113088
https://doi.org/10.1063/1.113088