Zobrazeno 1 - 1
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pro vyhledávání: '"H. Lüthl"'
Publikováno v:
MRS Proceedings. 618
SiGe island layers have been created by post growth anneal on supercritical layers grown at low temperatures (500°C) and high hydrogen pressures (40 Torr). The epitaxial growth has been performed in a commercially available single wafer RPCVD reacto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73df3c516817dbce210972d8ee09509
https://doi.org/10.1557/proc-618-129
https://doi.org/10.1557/proc-618-129
