Zobrazeno 1 - 10
of 14
pro vyhledávání: '"H. Kortegaard, Nielsen"'
Publikováno v:
Physica B: Condensed Matter. :743-747
The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-cen ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f6f5687e6982da54e3a9af17ccd144
https://doi.org/10.1016/j.physb.2003.09.151
https://doi.org/10.1016/j.physb.2003.09.151
Autor:
Anders Hallén, B. G. Svensson, Jennifer Wong-Leung, Patrick Lévêque, H. Kortegaard-Nielsen, Chennupati Jagadish, P. Pellegrino
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 186:334-338
Anew experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b850f76c147ff3fdfab11b18337cbf4
https://doi.org/10.1016/s0168-583x(01)00874-6
https://doi.org/10.1016/s0168-583x(01)00874-6
Autor:
Birte Svensson, Giovanni Alfieri, David Martin, Patrick Lévêque, Anders Hallén, H. Kortegaard Nielsen
Publikováno v:
Applied Physics Letters. 84:1704-1706
Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1 ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3721838b866476fd9772158e27ae31b9
https://doi.org/10.1063/1.1651656
https://doi.org/10.1063/1.1651656
Publikováno v:
Applied Physics Letters. 82:3865-3867
Low-dose implantations with 65 Si and 150 keV Ge ions into the n(+) top layer of Si n(+)p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transi ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407a7a1781398a523d9b45ddc0f845e2
https://doi.org/10.1063/1.1580640
https://doi.org/10.1063/1.1580640
Autor:
A. Nylandsted Larsen, R. Jones, H. Kortegaard Nielsen, D.W. Palmer, K. Bonde Nielsen, Abdelmadjid Mesli, J Adey, Sven Öberg, Patrick R. Briddon, L. Dobaczewski
Publikováno v:
Physical review letters. 97(10)
It has been an accepted fact for more than 40 years that the $E$ center in Si (the group-$V$ impurity---vacancy pair)---one of the most studied defects in semiconductors---has only one energy level in the band gap: namely, the acceptor level at about
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b132246de844a340436d257d9cfe712d
https://pubmed.ncbi.nlm.nih.gov/17025833
https://pubmed.ncbi.nlm.nih.gov/17025833
Autor:
C.E. Lindberg, L. Dobaczewski, Abdelmadjid Mesli, H. Kortegaard Nielsen, K. Bonde Nielsen, A. Nylandsted Larsen, V. Privitera
Publikováno v:
European Material Research Society (E-MRS) Spring Conference, Symposium on Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
253 (2006): 172–175. doi:10.1016/j.nimb.2006.10.024
info:cnr-pdr/source/autori:Nielsen HK, Mesli A, Dobaczewski L, Nielsen KB, Lindberg CE, Privitera V, Larsen AN/titolo:The As2V complex in silicon: Band-gap levels, migration and annealing/doi:10.1016%2Fj.nimb.2006.10.024/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2006/pagina_da:172/pagina_a:175/intervallo_pagine:172–175/volume:253
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
253 (2006): 172–175. doi:10.1016/j.nimb.2006.10.024
info:cnr-pdr/source/autori:Nielsen HK, Mesli A, Dobaczewski L, Nielsen KB, Lindberg CE, Privitera V, Larsen AN/titolo:The As2V complex in silicon: Band-gap levels, migration and annealing/doi:10.1016%2Fj.nimb.2006.10.024/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2006/pagina_da:172/pagina_a:175/intervallo_pagine:172–175/volume:253
In this study, we used n(+)p mesa diodes where the highly arsenic doped n(+) top layer was grown by molecular-beam epitaxy on top of a 5-mu m thick p-type layer grown by chemical-vapour deposition. The diodes were irradiated with 2 MeV electrons at r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::291d74f47b5154b59d1eb8815c457b63
https://hal.archives-ouvertes.fr/hal-00129335
https://hal.archives-ouvertes.fr/hal-00129335
Publikováno v:
Physical Review B. 72
The metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1x10(12) cm(-2). The experimental procedures i ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df9c02dc97310c2918ef5338f7ea15f7
https://doi.org/10.1103/physrevb.72.085208
https://doi.org/10.1103/physrevb.72.085208
Autor:
LÉvÊque, P., H. Kortegaard, Nielsen, Svensson, B.G., HallÉn, A., Wong-Leung, J., Jagadish, C., Privitera, V.
Publikováno v:
1st International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-based Devices
1st International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-based Devices, Sep 2004, Catania, Italy
1st International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-based Devices, Sep 2004, Catania, Italy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fbade40f5e75f763a69fa98217f9e6d8
https://hal.archives-ouvertes.fr/hal-00134213
https://hal.archives-ouvertes.fr/hal-00134213
Autor:
Chennupati Jagadish, Birte Svensson, Patrick Lévêque, Jennifer Wong-Leung, P. Pellegrino, H. Kortegaard-Nielsen
Publikováno v:
Applied Physics Letters. 80:1494-1495
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9eee7d037afb80185133aa7127f213a
https://doi.org/10.1063/1.1455141
https://doi.org/10.1063/1.1455141
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