Zobrazeno 1 - 10
of 27
pro vyhledávání: '"H. Kokura"'
Autor:
H Kokura
Publikováno v:
Journal of Nuclear Materials. :1217-1221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ac8bb8114fc4f3093c7e5e7a331f25
https://doi.org/10.1016/s0022-3115(96)00702-7
https://doi.org/10.1016/s0022-3115(96)00702-7
Autor:
T. Mizuuchi, H. Kokura, Koichi Sasaki, Hirotaka Toyoda, Fumimichi Sano, Katsumi Kondo, Tokuhiro Obiki, Hideo Sugai
Publikováno v:
Journal of Nuclear Materials. :1217-1221
Boronization based on electron cyclotron resonance (ECR) discharges is studied in a linear laboratory device under a parallel magnetic field of ∼ 0.1 T. A 2.45 GHz ECR discharge in a low-pressure heliumdecaborane mixture gives thin boron films loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e652c16d2b195e8c119f1b23be42529e
https://doi.org/10.1016/s0022-3115(97)80223-1
https://doi.org/10.1016/s0022-3115(97)80223-1
Autor:
H. Ohta, Y. Kim, Y. Shimamune, T. Sakuma, A. Hatada, A. Katakami, T. Soeda, K. Kawamura, H. Kokura, H. Morioka, T. Watanabe, J. Oh, Y. Hayami, J. Ogura, M. Tajima, T. Mori, N. Tamura, M. Kojima, K. Hashimoto
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad9f20085856b3a284ae91b2713017f
https://doi.org/10.1109/iedm.2005.1609316
https://doi.org/10.1109/iedm.2005.1609316
Autor:
Y. Hayami, Kazuo Kawamura, T. Sakuma, Kazuo Sukegawa, Masashi Shima, Shintaro Sato, Tamotsu Owada, K. Okoshi, Shunichi Fukuyama, Ken Sugimoto, K. Hosaka, Hiroshi Minakata, H. Kokura, K. Hashimoto, H. Ota, Tsunehisa Sakoda, Takayuki Aoyama, Naoyoshi Tamura, Motoshu Miyajima, Toshihiko Mori, Satoshi Nakai, J. Ogura, Akira Katakami, Akiyoshi Hatada, Kenichi Okabe, T. Miyashita, Y. Shimamune, Akio Yamaguchi, Hiroshi Morioka, Sergey Pidin, M. Kojima, T. Watanabe, Toshihiro Sugii, H. Fukutome, M. Okuno, Masafumi Nakaishi, T. Isome
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
High-performance low operation power (LOP) transistors were developed for 45nm node universal applications. A high uniaxial strain and low resistance NiSi technique, enhanced by a slit under the slim and high Young's modulus (YM) offset spacer covere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7c0fb344f80cd899d787b5e9b80f47
https://doi.org/10.1109/vlsit.2006.1705264
https://doi.org/10.1109/vlsit.2006.1705264
Autor:
Y. Hayami, M. Kojima, Masashi Shima, Akira Katakami, T. Sakuma, Y. Shimamune, Toshihiko Mori, T. Yamamoto, Kazuo Kawamura, Toshihiro Sugii, Masafumi Nakaishi, Hiroshi Morioka, Motoshu Miyajima, Naoyoshi Tamura, Y. S. Kim, Hiroyuki Ohta, Akiyoshi Hatada, H. Kokura
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
A SiGe source drain (SD) technology by using a disposable sidewall spacer (DSW) for high performance PMOSFET is proposed to avoid device degradation induced by high temperature epitaxial process. DSW process is effective for suppressing gate depletio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6057ec4404331141011d66391c048e72
https://doi.org/10.1109/essder.2005.1546646
https://doi.org/10.1109/essder.2005.1546646
Autor:
Naoto Horiguchi, Naoyoshi Tamura, K. Hashimoto, H. Kokura, Akira Katakami, T. Yamamoto, Y. Shimamune, Toshihiko Mori, K. Goto, T. Sakuma, S. Satoh, Akiyoshi Hatada, Y. Tagawa, Y. Hayami, Takashi Saiki, Toshihiro Sugii, Hiroshi Morioka, Kazuo Kawamura, S. Fukuta, M. Kojima, Satoshi Inagaki, Y. S. Kim, Hiroyuki Ohta
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Strain enhancing laminated SiN (SELS) is reported for the first time. Although the same thickness and stress SiN film is used, channel strain is enhanced by multi layer deposition. This effect was investigated by our simulations and experiments. To s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9af4be4a14550aa73dcbcd2acbf333
https://doi.org/10.1109/iedm.2004.1419111
https://doi.org/10.1109/iedm.2004.1419111
Autor:
Mitsuaki Hori, H. Kokura, K. Hashimoto, Manabu Kojima, Masataka Kase, Y. Tagawa, Y. Momiyama, Hiroshi Morioka, Toshihiro Sugii, Hiroyuki Ohta, S. Inagaki, Sergey Pidin, Toshihiko Mori, K. Goto, Naoyoshi Tamura
Publikováno v:
IEEE International Electron Devices Meeting 2003.
Aggressively scaled 25 nm gate CMOSFETs for the 65 nm node are reported. We successfully improved the short channel effect while keeping a high drive current by using total process controls (SW, offset-spacer, extension, halo, mechanical stress, etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abdf5f64a71c7e0ddeca613b3b25c075
https://doi.org/10.1109/iedm.2003.1269358
https://doi.org/10.1109/iedm.2003.1269358
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Akademický článek
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