Zobrazeno 1 - 10
of 183
pro vyhledávání: '"H. Kissel"'
Autor:
Jim Mckenzie, Chris Procyk, Michael H. Kissel, Sidney Cannon-Bailey, Parul Nisha, Chuck Cain, Bill Hardy
Publikováno v:
Noninvasive ventilatory support.
Rationale: This study used an unreleased modified noninvasive ventilator (BiPAP A40EFL, Philips/Respironics, Monroeville, PA) with the Forced Oscillation Technique (FOT) and the method of Dellaca et al (2004) to dynamically measure ∆Xrs, which then
Autor:
Jim Mckenzie, Sidney Cannon-Bailey, Michael H. Kissel, Parul Nisha, Chuck Cain, Bill Hardy, Joshua Stachel
Publikováno v:
Noninvasive ventilatory support.
Publikováno v:
Noninvasive ventilatory support.
Rationale: Expiratory Flow Limitation (EFL) in patients with COPD can present challenges when assisting ventilation. To overcome EFL during ventilation, EPAP is applied. The current study was undertaken to explore the variability of EFL determined us
Publikováno v:
Physiotherapists.
Akademický článek
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Autor:
J. W. Tomm, B., V. Strelchuk, B., A. Gerhardt, B., U. Zeimer, B., M. Zorn, B., H. Kissel, B., M. Weyers, B., J. Jiménez, B.
Publikováno v:
Journal of Applied Physics; 2/1/2004, Vol. 95 Issue 3, p1122-1126, 5p, 6 Graphs
Autor:
K. I. Kolokolov, E. V. Andreev, H. Kissel, S. S. Shirokov, N. Ya. Minina, A. E. Yunovich, E. V. Bogdanov
Publikováno v:
High Pressure Research. 29:495-499
Band structure calculations in p-Al x Ga1−x As/GaAs1−y P y /n-Al x Ga1−x As heterostructure under uni-axial compression in the 1 1 0 direction indicates an increase in the optical energy gap with dE ph/dP ≈ 85 meV GPa−1, a decrease in the q
Publikováno v:
High Pressure Research. 28:559-563
We present new results on the influence of uniaxial stress up to P=400 MPa along [110] direction on the electroluminescence (EL) spectra of p-Al x Ga1−x As/GaAs1−y P y /n-Al x Ga1−x As double heterostructures. With increasing stress, the emissi
Autor:
Yu. I. Mazur, Zh. M. Wang, M. P. Lisitsa, Georgiy G. Tarasov, Gregory J. Salamo, Z. Ya. Zhuchenko, H Kissel
Publikováno v:
Semiconductor Science and Technology. 22:86-96
The density of states for InAs/GaAs quantum dot (QDs) bi-layer arrays placed between two AlGaAs barriers is studied by means of photoluminescence (PL) excitation, resonant PL and time-resolved PL. By varying the excitation energy from above the AlGaA
Autor:
William Ted Masselink, E. Wiebicke, Julia Dobbert, H. Kissel, H. Kostial, G.G. Tarasov, Uwe Müller, Y.I. Mazur, R. Pomraenke, Vasyl P. Kunets
Publikováno v:
IEEE Sensors Journal. 5:883-888
The noise spectrum in micro-Hall devices based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs modulation-doped heterostructures was measured between 4 Hz and 65 kHz, allowing components due to thermal, 1/f, and generation-rec