Zobrazeno 1 - 10
of 40
pro vyhledávání: '"H. Kirihata"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 255:247-252
Using molecular-dynamics simulation, we study the impact of C60 fullerene molecules with energies up to several tens of keV on various target materials: graphite, fullerite, Au and a condensed Ar solid. The analysis is based on single impact events.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151a4360c0dde0c0edb8d25e071b69e3
https://doi.org/10.1016/j.nimb.2006.11.027
https://doi.org/10.1016/j.nimb.2006.11.027
Publikováno v:
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af6de4f3e1ad5bb44c8086955e4d3f8
https://doi.org/10.1109/ispsd.1990.991093
https://doi.org/10.1109/ispsd.1990.991093
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c50b46f7811310dcd6c03953ee2dec
https://doi.org/10.1109/ispsd.1992.991244
https://doi.org/10.1109/ispsd.1992.991244
Publikováno v:
PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference.
A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1200bffe3c7658fa4c6922b44d66311e
https://doi.org/10.1109/pesc.1988.18225
https://doi.org/10.1109/pesc.1988.18225
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
The present state and future direction of high-power semiconductor devices (>or=500 kVA) are discussed. To characterize the best choice of power devices, a figure of merit is proposed that takes into account thermal and structural factors of the pack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e73d49b1424f49e0aa3ff7e29e15a6
https://doi.org/10.1109/ispsd.1993.297099
https://doi.org/10.1109/ispsd.1993.297099
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
A 2.5 kV 100 A /spl mu/(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20 mm square chip is press-contacted with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb9d1126767861bd8dfc2a614c9b7bd
https://doi.org/10.1109/ispsd.1994.583631
https://doi.org/10.1109/ispsd.1994.583631
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
A 2.5k V-1.8 kA advanced type power pack IGBT has been developed using an original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79367c545582af09205962921b17b807
https://doi.org/10.1109/ispsd.1998.702739
https://doi.org/10.1109/ispsd.1998.702739
Publikováno v:
Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).
High power and high reliable IGBTs are used in applications to traction and high voltage converters. We have investigated a flat-pack IGBT, compared with an IGBT module and a GTO, to realize the ruggedness in electrical, thermal and mechanical stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3e1ea00067fba27be5da383d5fae33
https://doi.org/10.1109/ias.1998.730270
https://doi.org/10.1109/ias.1998.730270
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
The Power Pack IGBT has been tested in detail under several practical inverter systems and has obtained much useful data. Using this data and advanced technology, we have improved some items and finally developed an ultra high-power 2.5 kV-1800 A Pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7da68bcd3be65e8b86dbb84422dbe76
https://doi.org/10.1109/ispsd.1997.601480
https://doi.org/10.1109/ispsd.1997.601480
Conference
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