Zobrazeno 1 - 10
of 313
pro vyhledávání: '"H. Kibbel"'
Autor:
Jing Zhang, Rongqiang Li, Kaicheng Li, Peixin Qian, Yukui Liu, Daoguang Liu, Shiliu Xu, Yue Hao, Kaiquan He, Jun Xu, Zhengfan Zhang, H. Kibbel, G Chen, U Seiler, U. Konig, Z Liu, Rongkan Liu, Gangyi Hu, A. Gruhle, L Liu
Publikováno v:
ECS Transactions. 3:365-376
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry & wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). The measured results are: cutoff frequency fT=103.3GH
Autor:
H. Kibbel, Helmut Jorke, Oliver G. Schmidt, Erich Kasper, J.-F. Luy, Jochen Eberhardt, Mathieu Stoffel, M.W. Dashiell
Publikováno v:
Solid-State Electronics. 48:837-840
For the first time it was possible to obtain a current gain increase to more than 0 dB at frequencies beyond the transit frequency fT by use of an SiGe resonance phase transistor (RPT). This was achieved by using a very thick base layer with a graded
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 16:596-601
We have fabricated silicon solar cells with embedded germanium layers to form three-dimensional islands in the Stranski–Krastanov growth mode. The additional Ge-layers increase the infrared absorption in the base of the cell to achieve higher overa
Autor:
E. I. Gatskevich, Nikolai A. Sobolev, Joaquim P. Leitão, G. D. Ivlev, Augusto B. Lopes, Hartmut Presting, M. C. Carmo, D. N. Sharaev, H. Kibbel, A. Fonseca
Publikováno v:
Materials Science and Engineering: C. 23:19-22
Si5Ge5 superlattices (SL) were treated by 80-ns pulses of a ruby laser in a wide range of energy densities. The induced structural and electronic changes were monitored in situ by time-resolved reflectivity (TRR) and ex situ by scanning electron micr
Publikováno v:
International Journal of Modern Physics B. 16:4347-4351
Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers incr
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 14:249-254
We have studied the self-organized growth of Ge-islands on Si-substrates in the Stranski–Krastanow growth mode with Si MBE for the use in thin film solar cells. For samples with high Ge concentrations and high crystal quality the increased infrared
Publikováno v:
Solid-State Electronics. 45:1921-1925
We have studied the influence of nanoscaled lateral silicon/silicon–germanium layers and three-dimensional germanium quantum dots on the performance of silicon based infrared detectors in the wavelength range between 2 and 10 μm and solar cells fo
Publikováno v:
Solid State Phenomena. :539-544
Publikováno v:
Thin Solid Films. 389:146-152
A new method to relax thin constant composition molecular beam epitaxy (MBE) grown SiGe buffer layers on silicon (100) substrates has been studied. A low energy plasma cleaning process (LEPC) using hydrogen prior to deposition can reduce the Si 1−
Publikováno v:
Journal of Materials Science: Materials in Electronics. 12:235-240
For a successful fabrication of hetero-CMOS transistors the compatibility of the epitaxial growth of the heterostructures with the standard CMOS process is an important factor. A very promising integration approach utilizes the realization of heteros