Zobrazeno 1 - 10
of 110
pro vyhledávání: '"H. Kheyrandish"'
Autor:
Helmut Schröder, A. Bolkhovitinov, F. F. Era, Denny Wernham, G. Van Papendrecht, Wolfgang Riede, Clemens Heese, H. Kheyrandish, T. Ivanov, A. Baselga Mateo, L. Mondin, Dominique Thibault, Y. Butenko, Markus Hippler, Alessandra Ciapponi
Publikováno v:
International Conference on Space Optics — ICSO 2016.
During the Aeolus laser and instrument transmitter development it was shown that atmosphere quality was one major limiting factor for high energy UV laser operation at ambient pressure. As already proven in literature operation can only be safely obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4530ca1314898040c8f8fc6c67987ab
https://doi.org/10.1117/12.2296209
https://doi.org/10.1117/12.2296209
Autor:
H. Kheyrandish, C. Dupré, Pier-Francesco Fazzini, Filadelfo Cristiano, Wilfried Lerch, Thomas Ernst, Silke Paul, K.K. Bourdelle
Publikováno v:
Materials Science and Engineering: B. :256-259
The detailed knowledge of the effects of the buried interface on defect evolution in silicon-on-insulator wafers is mandatory to accurately control dopant diffusion and activation. To be able to study this phenomenon, quantitative data on end-of-rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fec0d970dc2042877877f0d4f7f61bd
https://doi.org/10.1016/j.mseb.2008.08.018
https://doi.org/10.1016/j.mseb.2008.08.018
Autor:
H. Kheyrandish, A. Pakfar, A. Martinez-Limia, Clement Tavernier, Peter Pichler, Silke Paul, Wilfried Lerch
Publikováno v:
Materials Science and Engineering: B. :211-215
The possibility of using solid phase epitaxial regrowth (SPER) for activation of arsenic after amorphizing implantation in silicon is explored in this contribution and compared to spike annealing and published flash-annealing experiments. SPER takes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da4d6d0433df91200cfdc3102bb3057
https://doi.org/10.1016/j.mseb.2008.09.045
https://doi.org/10.1016/j.mseb.2008.09.045
Autor:
Filadelfo Cristiano, Silke Paul, H. Kheyrandish, Wilfried Lerch, J. Niess, Fabrice Severac, J. Gelpey, Pier-Francesco Fazzini, D. Bolze, A. Martinez-Limia, S. McCoy, Peter Pichler
Publikováno v:
Materials Science and Engineering: B. :3-13
Millisecond annealing as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically activated junctions. For the 45-nm technology node and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db24e0bd46a15e27e5cdcc7e725216c
https://doi.org/10.1016/j.mseb.2008.08.017
https://doi.org/10.1016/j.mseb.2008.08.017
Autor:
Pier-Francesco Fazzini, H. Kheyrandish, L. Ciampolini, Filadelfo Cristiano, A. Tsibizov, Christoph Zechner, A. Pakfar, El Mehdi Bazizi, Clement Tavernier
Publikováno v:
Materials Science and Engineering: B. :275-278
In this work, the evolution of boron trapping at End-of-Range (EOR) defects was investigated by secondary ion mass spectrometry (SIMS) and transmission electron microscope (TEM). Si wafers with a constant boron concentration of 2 × 10 18 cm −3 wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1dc88768d16de8deb934e4fbcf2191
https://doi.org/10.1016/j.mseb.2008.09.044
https://doi.org/10.1016/j.mseb.2008.09.044
Autor:
Wilfried Lerch, Eléna Bedel-Pereira, H. Kheyrandish, Fabrice Severac, Filadelfo Cristiano, Silke Paul
Publikováno v:
Materials Science and Engineering: B. :225-228
In this paper, we present an empirical method for the self-consistent interpretation of SIMS and Hall effect measurements of boron-doped ultra-shallow junctions that allows to estimate the activation level of the doped layers (maximum active dopant c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d58ab7339395d5ce48a0ccfb10fd88
https://doi.org/10.1016/j.mseb.2008.08.013
https://doi.org/10.1016/j.mseb.2008.08.013
Publikováno v:
ECS Transactions. 13:13-22
It has been recognized for a long time that both peak temperature and time at temperature are important in RTP processes such as spike anneals. This paper will discuss the importance of time at temperature during flash assist rapid thermal processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4310f496e97719ebd9fbc56b5d241708
https://doi.org/10.1149/1.2911480
https://doi.org/10.1149/1.2911480
Autor:
H. Kheyrandish, S. Rushworth, L. M. Smith, Ian Watson, C. J. Deatcher, S. Romani, M.G. Cheong, Robert W. Martin, C. Liu, K. Bejtka
Publikováno v:
Semiconductor Science and Technology. 21:1287-1295
Magnesium doping is critically important in GaN device technology, since it provides the only viable method of producing layers with p-type conductivity. Electron probe microanalysis with wavelength dispersive x-ray spectrometry (WDX-EPMA) was used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4974d6a0283a1c2641a7ffb757779cf4
https://doi.org/10.1088/0268-1242/21/9/013
https://doi.org/10.1088/0268-1242/21/9/013
Autor:
S.F. Corcoran, S.B. Patel, Johann L. Dr. Maul, Pei-Fen Chou, Mark Dowsett, Richard J. H. Morris, G. A. Cooke, H. Kheyrandish
Publikováno v:
Applied Surface Science. :500-503
In this paper we demonstrate the use of red laser illumination to stimulate charge carriers in semiconductor layers with very low residual carrier densities, to eliminate surface potential changes during SIMS depth profiling. We show that very simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369d101fbc80df48dc2bffea74f5575e
https://doi.org/10.1016/s0169-4332(02)00765-1
https://doi.org/10.1016/s0169-4332(02)00765-1
Autor:
John H. Marsh, H. Kheyrandish, Ian Watson, T. Kim, Robert W. Martin, Martin D. Dawson, Thomas F. Krauss, S. Romani, R.M. De La Rue, David Burns
Publikováno v:
physica status solidi (a). 176:67-71
An approach to the fabrication of InGaN surface-emitting lasers using lateral epitaxial overgrowth (LEO) on patterned dielectric Bragg mirrors is described. The properties of SiO2/ZrO2 mirrors, annealed to simulate LEO conditions, were investigated u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7177497f96576849267aaa7c91f099f6
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<67::aid-pssa67>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<67::aid-pssa67>3.0.co