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pro vyhledávání: '"H. Kh. Al- Lamy"'
Autor:
H. Kh. Al- Lamy
Publikováno v:
Iraqi Journal of Physics, Vol 9, Iss 16 (2011)
In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40.
Externí odkaz:
https://doaj.org/article/06d92213e90948fc8bc003d50826cf2e
Publikováno v:
Ibn Al-Haitham Journal for Pure and Applied Sciences, Vol 24, Iss 1 (2016)
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. El
Externí odkaz:
https://doaj.org/article/01adff3a19c649e8aa88766e0784daa1