Zobrazeno 1 - 10
of 78
pro vyhledávání: '"H. Kanber"'
Autor:
S.X. Bar, A. Kurdoghlian, W. Yau, Z. Bardai, M. Gawronski, C.S. Wu, H. Kanber, C. Pao, C. Seashore, M. Hu, D. Bosch
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:257-266
We have demonstrated very good performance, high yield Ka-band multifunctional MMIC results using our recently developed 0.25-/spl mu/m gate length pseudomorphic HEMT (PHEMT) manufacturing technology. Four types of MMIC transceiver components-low noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0858ce08ab6d4bfc0a4ea4b01f621334
https://doi.org/10.1109/22.348082
https://doi.org/10.1109/22.348082
Publikováno v:
Journal of Electronic Materials. 23:159-166
GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked 50 and 76 mm GaAs substrates by low pressure organometallic vapor phase epitaxy. Very smooth, featureless morphology and 100 percent selectivity of GaAs island
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0d85ca341aed6dff50a42a510d3063
https://doi.org/10.1007/bf02655263
https://doi.org/10.1007/bf02655263
Publikováno v:
Journal of Electronic Materials. 19:1265-1271
We studied silver barrier ohmic (Ni/AuGe/Ag/Au) contacts to the GaAs based HEMT structures and observed strong dependence of the cleaning procedures on the ohmic con-tact resistance (Rc), its stability and reliability. The chemical profiles of the me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b71aab7bd5de1acf8c00b60cf19655
https://doi.org/10.1007/bf02673341
https://doi.org/10.1007/bf02673341
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
There is a growing need for rapid non-destructive mapping of defects and polishing damage in semi-insulating GaAs wafers used in the efficient manufacture of microwave and millimeter wave monolithic integrated circuits (MMICs). Optical mapping by spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f02883a9f75f63af66429dfd7d4d2c
https://doi.org/10.1109/sim.1992.752696
https://doi.org/10.1109/sim.1992.752696
Publikováno v:
11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.
An approach to fabricating X-band power FETs by direct implantation into MBE-grown GaAs/Si incorporating low-temperature buffer layers is described. Devices fabricated on GaAs-on-Si wafers were compared directly to GaAs ion-implanted FET wafers that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830671f21edb71064923edee72adb7e5
https://doi.org/10.1109/gaas.1989.69315
https://doi.org/10.1109/gaas.1989.69315
Publikováno v:
15th Annual GaAs IC Symposium.
The authors present an approach to establishing PHEMT manufacturing technology. They discuss the impact of development work in four key process areas. They also demonstrate good wafer uniformity and wafer to wafer reproducibility for PHEMT X-band mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4003b84944a5d1584a42a570ce72677
https://doi.org/10.1109/gaas.1993.394476
https://doi.org/10.1109/gaas.1993.394476
Autor:
H. Kanber, B.M. Paine, S. Janesch, C.S. Wu, S.X. Bar, D. Kaputa, W. Yau, W. Fabian, Z. Bardai
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Design translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is fabricated using PHEMT materials at two different GaAs foundries (Hughes and Martin Marietta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94271956a1f33817191ec66ebb81bfd3
https://doi.org/10.1109/mwsym.1994.335549
https://doi.org/10.1109/mwsym.1994.335549
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:297
GaAs has been grown by molecular‐beam epitaxy on both silicon and silicon on sapphire. The incorporation of a low temperature buffer has reduced the film stress from 3.0 to 2.2 kbar for GaAs grown on silicon. However, films stress can be completely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637062a5233ddd1599ac63ca9f55fd6a
https://doi.org/10.1116/1.585056
https://doi.org/10.1116/1.585056
Publikováno v:
Journal of Electronic Materials. 11:1083-1114
We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO2 encapsulant in a H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99dc57bd2af0c13b0452bc65f6f6025b
https://doi.org/10.1007/bf02658918
https://doi.org/10.1007/bf02658918
Publikováno v:
Journal of Crystal Growth. 91:632-638
Surface cleaning techniques used for semi-insulating GaAs substrates prior to epitaxial growth can have an important and sometimes detrimental effect on the quality and characteristics of epitaxial layers that are grown on them. We observe that a HF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94013d50240f1922e51f03c58ac8cf3c
https://doi.org/10.1016/0022-0248(88)90132-7
https://doi.org/10.1016/0022-0248(88)90132-7