Zobrazeno 1 - 10
of 67
pro vyhledávání: '"H. Kabza"'
Autor:
H. Kabza
Publikováno v:
Encyclopedia of Electrochemical Power Sources ISBN: 9780444527455
Conventional hybrids that use a combination of an internal combustion engine (ICE), an electric motor, and a battery aim at avoiding inefficient operation of the IEC and thereby reducing fuel consumption. There is no clear-cut definition of hybrids b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48cc22e840e43fafcad871446129b0a
https://doi.org/10.1016/b978-044452745-5.00086-1
https://doi.org/10.1016/b978-044452745-5.00086-1
Metal‐dopant‐compound formation in TiSi2and TaSi2: Impact on dopant diffusion and contact resistance
Publikováno v:
Journal of Applied Physics. 70:693-707
The refractory metal disilicides TiSi2 and TaSi2 were investigated for their usefulness as dopant diffusion sources. During furnace annealing and rapid thermal processing, strong decomposition reactions occur between the dopants D (B or As) and the r
Publikováno v:
Journal of Applied Physics. 70:708-719
The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly‐ or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
Light triggered 8 kV thyristors with a new type of integrated breakover diode were fabricated. This breakover diode is realized by a well-defined curvature of the junction between the p-base and the n-base. For this purpose, a "masked" Al diffusion i
Autor:
H.-J. Schulze, Y. Gerstenmaier, P. Voss, H. Kabza, Frank Pfirsch, J.W.W. Schmid, K. Platzoder
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
DC stress tests on high power semiconductor devices at nominal device ratings yielded unexpected device failures. Without prior indication the devices were destroyed spontaneously anywhere in the bulk. The failure rate depends exponentially on the ap
Autor:
L. Treitinger, I. Kerner, J. Popp, Emmerich Bertagnolli, K. Ehinger, H. Weidlich, H. Kabza, R. Kopl, H. M. Rein, M. Reisch, J. Weng, H. von Philipsborn, P. Weger, R. Schreiter
Publikováno v:
International Zurich Seminar on Digital Communications, Electronic Circuits and Systems for Communications..
The technical requirements on versatile IC technologies include speed capability for operation in the 10 GHz range and above; low power consumption in the 1-5 GHz range for possible battery power supply; capability of high-precision analog functions
Publikováno v:
ISIE'2000. Proceedings of the 2000 IEEE International Symposium on Industrial Electronics (Cat. No.00TH8543).
In growing extent the functionality of technical systems is determined by software. This functionality, however, is spread over several distributed electronic control units (ECUs). Design and development of the software is done simultaneously with th
Publikováno v:
MRS Proceedings. 182
The progress in IC technology is unthinkable without the extensive use of polysilicon for a wide variety of purposes. These range from simple passive components like resistors and contacts through more complex structures such as recrystallized layers
Publikováno v:
Zeitschrift für Naturforschung A. 34:6-12
On the basis of the phosphorescence spectrum of dinaphtho-(2′.3′:1.2); (2″.3″:6.7)-pyrene in n-dodecane (Shpolskii matrix) at T = 1.3 K a site and vibrational analysis was performed. With the help of ODMR measurements the symmetries of the vi
Publikováno v:
Zeitschrift für Naturforschung A. 34:265-268
New aspects for the interpretation of the zero field splitting parameter D of the lowest excitet triplet state of polycyclic hydrocarbons are presented. A model connecting the dipole-dipole interaction between the two triplet electrons with Clar’s