Zobrazeno 1 - 10
of 24
pro vyhledávání: '"H. K. Shon"'
Publikováno v:
Drinking Water Engineering and Science, Vol 6, Iss 1, Pp 47-53 (2013)
The application of membrane technology in water and wastewater treatment is increasing due to stringent water quality standards. Nanofiltration (NF) is one of the widely used membrane processes for water and wastewater treatment in addition to other
Externí odkaz:
https://doaj.org/article/d8b52c700eeb4c84ab3fe4853ea9849f
Publikováno v:
Journal of environmental management. 201
During algal bloom periods, operation of seawater reverse osmosis (SWRO) pretreatment processes (e.g. ultrafiltration (UF)) has been hindered due to the high concentration of algal cells and algal organic matter (AOM). The present study evaluated for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::87dcb39a9d3d55ef6312ccb9b8a6b7a7
https://pubmed.ncbi.nlm.nih.gov/28636970
https://pubmed.ncbi.nlm.nih.gov/28636970
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Encyclopedia of Sustainability Science and Technology ISBN: 9781493924936
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b15fa3f3cf051a47950d76c39d219393
https://doi.org/10.1007/978-1-4939-2493-6_909-4
https://doi.org/10.1007/978-1-4939-2493-6_909-4
Autor:
Hanchul Kim, Jong Seok Jeong, Hee-Ok Kim, H. K. Shon, Young Soo Lim, Jung-Yeal Lee, D. W. Moon
Publikováno v:
Applied Physics Letters. 79:3606-3608
A method for the dry thermal oxidation of a strained SiGe layer is proposed. By oxidation of a graded Si1−xGex layer, the effect of Ge pileup was significantly reduced and the undesirable strain relaxation by defect formation is prohibited. After o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c29e49f78b54fd26d6e16e8b274a0c
https://doi.org/10.1063/1.1415373
https://doi.org/10.1063/1.1415373
Publikováno v:
Water science and technology : a journal of the International Association on Water Pollution Research. 51(6-7)
In this study, different pretreatment methods such as ferric chloride (FeCl3) flocculation and powdered activated carbon (PAC) adsorption were evaluated in terms of their capability in removing effluent organic matter (EfOM) and the characteristics o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3cd9047338e1d0b886f7d805d8a128cc
https://pubmed.ncbi.nlm.nih.gov/16003987
https://pubmed.ncbi.nlm.nih.gov/16003987
Publikováno v:
Water science and technology : a journal of the International Association on Water Pollution Research. 50(12)
Cross flow microfiltration with in-line flocculation reduces the fouling of membranes thus leading to high quality product water. A detailed experimental study conducted with an artificial suspension (particle size distribution similar to that of sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ef8992ecb1c31aee52962bdafb426c1d
https://pubmed.ncbi.nlm.nih.gov/15686030
https://pubmed.ncbi.nlm.nih.gov/15686030
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:323
To meet the demand for shallow junction secondary ion mass spectrometry (SIMS) profiling, the surface transient Si sputtering effect should be corrected in addition to the improvement of depth resolution. With low-energy grazing incident ions, the SI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8814e21fd66232bd1bc3a2a67c891e0
https://doi.org/10.1116/1.1634956
https://doi.org/10.1116/1.1634956
Autor:
Y. X. Zhao1, Phuntsho, S.2, B. Y. Gao1 baoyugao_sdu@aliyun.com, X. Huang1, Q. B. Qi1, Q. Y. Yue1, Y. Wang1, J. -H. Kim3, H. K. Shon2 Hokyong.Shon.1@uts.edu.au
Publikováno v:
Environmental Science & Technology. 11/19/2013, Vol. 47 Issue 22, p12966-12975. 10p.
Publikováno v:
Scopus-Elsevier
A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cf981dfe5c0cd0c0a1d60c4af5b0e01
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036575095&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036575095&partnerID=MN8TOARS