Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

Autor: A. Fellous, Ekaterine Chikoidze, Tamar Tchelidze, Cuong Ton-That, Ferechteh H. Teherani, Carles M. Rubio, H. J. von Bardeleben, Yves Dumont, Eric V. Sandana, Guillaume Sauthier, Philippe Bove, David J. Rogers, Amador Pérez-Tomás

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Digital.CSIC. Repositorio Institucional del CSIC
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Materials Today Physics
Materials Today Physics, Elsevier, 2019, 8, pp.10-17. ⟨10.1016/j.mtphys.2018.11.006⟩

Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2da4013b82badbd91baeb91d94ccffe
http://hdl.handle.net/2072/438807

Ferromagnetic Resonance Spectroscopy: Basics and Applications

Autor: J. L. Cantin, F. Gendron, H. J. von Bardeleben

Publikováno v: Electron Paramagnetic Resonance Spectroscopy ISBN: 9783030396671

Ferromagnetic resonance (FMR) uses the same equipment as EPR to study strong interactions between spins characterising crystallised ferromagnetic materials. The parameters describing these very anisotropic interactions are deduced from the variation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::728b60ec4e3db880359161ec27c58c31
https://doi.org/10.1007/978-3-030-39668-8_12

NV centers in silicon carbide: from theoretical predictions to experimental observation

Autor: H. J. von Bardeleben, J. L. Cantin

Publikováno v: MRS Communications. 7:591-594

NV centers in silicon carbide have been identified in the three main polytypes 3C, 4H, 6H by magnetic resonance and photoluminescence experiments and related ab initio calculations. Their properties show them to be promising centers for applications

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d8981fd03daf921078a154679bb788b
https://doi.org/10.1557/mrc.2017.56

Conduction mechanism and shallow donor properties in silicon-dopedɛ-Ga2O3thin films: An electron paramagnetic resonance study

Autor: Roberto Fornari, Alessio Bosio, H. J. von Bardeleben, Antonella Parisini, J. L. Cantin

Publikováno v: Physical Review Materials. 3

The defects in Si-doped \ensuremath{\epsilon}-${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ epitaxial layers have been investigated by electron paramagnetic resonance (EPR) spectroscopy. The results show that Si doping introduces a single, paramagnetic defect,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62a3f2a91c7de21ac61d3b7548de2aa1
https://doi.org/10.1103/physrevmaterials.3.084601

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Autor: J. P. Nys, Ph. Ebert, David Troadec, Xavier Wallart, Didier Stiévenard, Marc Veillerot, Bruno Grandidier, J.F. Lampin, Thomas Demonchaux, Gilles Patriarche, I. Lefebvre, K. K. Sossoe, M. M. Dzagli, H. J. von Bardeleben, M. A. Mohou, A. Addad, M. Schnedler, Christophe Coinon, Maxime Berthe

Publikováno v: Physical Review Materials. 2

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc97f0518b78850c8755fed965533552
https://doi.org/10.1103/physrevmaterials.2.104601